Compositional control of homogeneous InGaN nanowires with the In content up to 90.


Journal

Nanotechnology
ISSN: 1361-6528
Titre abrégé: Nanotechnology
Pays: England
ID NLM: 101241272

Informations de publication

Date de publication:
25 Jan 2019
Historique:
pubmed: 21 11 2018
medline: 21 11 2018
entrez: 21 11 2018
Statut: ppublish

Résumé

Homogenous InGaN nanowires with a controlled indium composition up to 90% are grown on GaN/c-Al

Identifiants

pubmed: 30457977
doi: 10.1088/1361-6528/aaec39
doi:

Types de publication

Journal Article

Langues

eng

Pagination

044001

Auteurs

Classifications MeSH