Improved pH Sensitivity and Reliability for Extended Gate Field-Effect Transistor Sensors Using High-
Journal
Journal of nanoscience and nanotechnology
ISSN: 1533-4880
Titre abrégé: J Nanosci Nanotechnol
Pays: United States
ID NLM: 101088195
Informations de publication
Date de publication:
01 03 2019
01 03 2019
Historique:
entrez:
25
11
2018
pubmed:
25
11
2018
medline:
25
11
2018
Statut:
ppublish
Résumé
In this study, we fabricated extended-gate (EG) field-effect transistor (FET) pH sensors with dualgate (DG) structures, using a range of dielectric sensing membranes (SiO₂, Si₃N₄, HfO₂ and Ta₂O
Identifiants
pubmed: 30469200
doi: 10.1166/jnn.2019.16222
doi:
Types de publication
Journal Article
Research Support, Non-U.S. Gov't
Langues
eng
Sous-ensembles de citation
IM