Effect of the Active Channel Thickness Variation in Amorphous In-Zn-Sn-O Thin Film Transistor.
Journal
Journal of nanoscience and nanotechnology
ISSN: 1533-4880
Titre abrégé: J Nanosci Nanotechnol
Pays: United States
ID NLM: 101088195
Informations de publication
Date de publication:
01 Mar 2019
01 Mar 2019
Historique:
entrez:
25
11
2018
pubmed:
25
11
2018
medline:
25
11
2018
Statut:
ppublish
Résumé
Ternary oxide thin films in the In₂O₃-ZnO-SnO₂ system were studied for potential applications in oxide semiconductor thin film transistors (TFTs). An amorphous In-Zn-Sn-O (a-IZTO) active channel layer was deposited by RF magnetron sputtering at room temperature on an
Identifiants
pubmed: 30469246
doi: 10.1166/jnn.2019.16251
doi:
Types de publication
Journal Article
Langues
eng