Electrical Stability of Solution-Processed Indium Oxide Thin-Film Transistors.
Journal
Journal of nanoscience and nanotechnology
ISSN: 1533-4880
Titre abrégé: J Nanosci Nanotechnol
Pays: United States
ID NLM: 101088195
Informations de publication
Date de publication:
01 Apr 2019
01 Apr 2019
Historique:
entrez:
30
11
2018
pubmed:
30
11
2018
medline:
30
11
2018
Statut:
ppublish
Résumé
We investigated the electrical stability of bottom-gate/top-contact-structured indium oxide (In₂O₃) thin-film transistors (TFTs) in atmospheric air and under vacuum. The solution-processed In₂O₃ film exhibits a nanocrystalline morphology with grain boundaries. The fabricated In₂O₃ TFTs operate in an
Identifiants
pubmed: 30487002
doi: 10.1166/jnn.2019.16005
doi:
Types de publication
Journal Article
Langues
eng