New Assembly-Free Bulk Layered Inorganic Vertical Heterostructures with Infrared and Optical Bandgaps.
Two-dimensional materials
band gap
density functional theory
heterojunctions
layered materials
van der Waals heterostructures
Journal
Nano letters
ISSN: 1530-6992
Titre abrégé: Nano Lett
Pays: United States
ID NLM: 101088070
Informations de publication
Date de publication:
09 01 2019
09 01 2019
Historique:
pubmed:
12
12
2018
medline:
12
12
2018
entrez:
12
12
2018
Statut:
ppublish
Résumé
In principle, a nearly endless number of unique van der Waals heterostructures can be created through the vertical stacking of two-dimensional (2D) materials, resulting in unprecedented potential for material design. However, this widely employed synthetic method for generating van der Waals heterostructures is slow, imprecise, and prone to introducing interlayer contaminants when compared with synthesis methods that are scalable to industrially relevant scales. Herein, we study the properties of a new class of layered bulk inorganic materials that has recently been reported that we call assembly-free bulk layered inorganic heterostructures, wherein the individual layers are of dissimilar chemical composition, distinguishing them from commonly studied layered materials. We find that these bulk materials exhibit properties similar to vertical heterostructures but without the complex and unscalable stacking process. Using state-of-the-art computational approaches, we study the electronic properties of livingstonite (HgSb
Identifiants
pubmed: 30525679
doi: 10.1021/acs.nanolett.8b03500
doi:
Types de publication
Journal Article
Research Support, U.S. Gov't, Non-P.H.S.
Langues
eng