New Assembly-Free Bulk Layered Inorganic Vertical Heterostructures with Infrared and Optical Bandgaps.

Two-dimensional materials band gap density functional theory heterojunctions layered materials van der Waals heterostructures

Journal

Nano letters
ISSN: 1530-6992
Titre abrégé: Nano Lett
Pays: United States
ID NLM: 101088070

Informations de publication

Date de publication:
09 01 2019
Historique:
pubmed: 12 12 2018
medline: 12 12 2018
entrez: 12 12 2018
Statut: ppublish

Résumé

In principle, a nearly endless number of unique van der Waals heterostructures can be created through the vertical stacking of two-dimensional (2D) materials, resulting in unprecedented potential for material design. However, this widely employed synthetic method for generating van der Waals heterostructures is slow, imprecise, and prone to introducing interlayer contaminants when compared with synthesis methods that are scalable to industrially relevant scales. Herein, we study the properties of a new class of layered bulk inorganic materials that has recently been reported that we call assembly-free bulk layered inorganic heterostructures, wherein the individual layers are of dissimilar chemical composition, distinguishing them from commonly studied layered materials. We find that these bulk materials exhibit properties similar to vertical heterostructures but without the complex and unscalable stacking process. Using state-of-the-art computational approaches, we study the electronic properties of livingstonite (HgSb

Identifiants

pubmed: 30525679
doi: 10.1021/acs.nanolett.8b03500
doi:

Types de publication

Journal Article Research Support, U.S. Gov't, Non-P.H.S.

Langues

eng

Pagination

142-149

Auteurs

Classifications MeSH