A Freestanding Stretchable and Multifunctional Transistor with Intrinsic Self-Healing Properties of all Device Components.

carbon nanotubes electronic tattoos field-effect transistors self-healing stretchable

Journal

Small (Weinheim an der Bergstrasse, Germany)
ISSN: 1613-6829
Titre abrégé: Small
Pays: Germany
ID NLM: 101235338

Informations de publication

Date de publication:
01 2019
Historique:
received: 22 09 2018
revised: 22 11 2018
pubmed: 15 12 2018
medline: 15 12 2018
entrez: 15 12 2018
Statut: ppublish

Résumé

A flexible and stretchable field-effect transistor (FET) is an essential element in a number of modern electronics. To realize the potential of this device in harsh real-world conditions and to extend its application spectrum, new functionalities are needed to be introduced into the device. Here, solution-processable elements based on carbon nanotubes that empower flexible and stretchable FET with high hole-mobility (µ

Identifiants

pubmed: 30548393
doi: 10.1002/smll.201803939
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

e1803939

Informations de copyright

© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Auteurs

Muhammad Khatib (M)

The Department of Chemical Engineering, Technion - Israel Institute of Technology, Haifa, 3200003, Israel.

Tan-Phat Huynh (TP)

Laboratory of Physical Chemistry, Faculty of Science and Engineering, Åbo Akademi University, Porthaninkatu 3-5, 20500, Turku, Finland.

Yunfeng Deng (Y)

The Department of Chemical Engineering, Technion - Israel Institute of Technology, Haifa, 3200003, Israel.

Yehu David Horev (YD)

The Department of Chemical Engineering, Technion - Israel Institute of Technology, Haifa, 3200003, Israel.
The Russell Berrie Nanotechnology Institute, Technion - Israel Institute of Technology, Haifa, 3200003, Israel.

Walaa Saliba (W)

The Department of Chemical Engineering, Technion - Israel Institute of Technology, Haifa, 3200003, Israel.

Weiwei Wu (W)

School of Advanced Materials and Nanotechnology, Xidian University, Shaanxi, 710126, P.R. China.

Hossam Haick (H)

The Department of Chemical Engineering, Technion - Israel Institute of Technology, Haifa, 3200003, Israel.
The Russell Berrie Nanotechnology Institute, Technion - Israel Institute of Technology, Haifa, 3200003, Israel.

Classifications MeSH