Susceptible Surface Sulfide Regulates Catalytic Activity of CdSe Quantum Dots for Hydrogen Photogeneration.

hydrogen evolution photocatalysis quantum dots surface regulation

Journal

Advanced materials (Deerfield Beach, Fla.)
ISSN: 1521-4095
Titre abrégé: Adv Mater
Pays: Germany
ID NLM: 9885358

Informations de publication

Date de publication:
Feb 2019
Historique:
received: 29 07 2018
revised: 27 10 2018
pubmed: 21 12 2018
medline: 21 12 2018
entrez: 21 12 2018
Statut: ppublish

Résumé

Semiconducting quantum dots (QDs) have recently triggered a huge interest in constructing efficient hydrogen production systems. It is well established that a large fraction of surface atoms of QDs need ligands to stabilize and avoid them from aggregating. However, the influence of the surface property of QDs on photocatalysis is rather elusive. Here, the surface regulation of CdSe QDs is investigated by surface sulfide ions (S

Identifiants

DOI: 10.1002/adma.201804872 PMID: 30570781
pubmed: 30570781
doi: 10.1002/adma.201804872
doi:

Types de publication

Journal Article

Langues

eng

Pagination

e1804872

Subventions

Organisme : Ministry of Science and Technology of China
ID : 2014CB239402
Organisme : Ministry of Science and Technology of China
ID : 2017YFA0206903
Organisme : National Science Foundation of China
ID : 91427303
Organisme : National Science Foundation of China
ID : 21390404
Organisme : National Science Foundation of China
ID : 21403260
Organisme : National Science Foundation of China
ID : 21603248
Organisme : Strategic Priority Research Program of the Chinese Academy of Science
ID : XDB17030000
Organisme : Chinese Academy of Sciences
ID : QYZDY-SSW-JSC029

Informations de copyright

© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Auteurs

Xiang-Bing Fan (XB)

Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
School of Future Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China.

Shan Yu (S)

Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
School of Future Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China.

Xian Wang (X)

School of Future Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China.
Beijing National Laboratory for Molecular Sciences, Key Laboratory of Photochemistry, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.

Zhi-Jun Li (ZJ)

Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
School of Future Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China.

Fei Zhan (F)

School of Future Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China.
Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, 100049, P. R. China.

Jia-Xin Li (JX)

Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
School of Future Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China.

Yu-Ji Gao (YJ)

Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
School of Future Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China.

An-Dong Xia (AD)

School of Future Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China.
Beijing National Laboratory for Molecular Sciences, Key Laboratory of Photochemistry, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.

Ye Tao (Y)

School of Future Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China.
Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, 100049, P. R. China.

Xu-Bing Li (XB)

Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
School of Future Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China.

Li-Ping Zhang (LP)

Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
School of Future Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China.

Chen-Ho Tung (CH)

Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
School of Future Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China.

Li-Zhu Wu (LZ)

Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
School of Future Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China.
ORCID: 0000-0002-5561-9922

Classifications MeSH