Gate-Tunable Thermal Metal-Insulator Transition in VO

2D materials field-effect transistor metal−insulator transition phase-change materials tungsten diselenide van der Waals heterostructures vanadium dioxide

Journal

ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991

Informations de publication

Date de publication:
23 Jan 2019
Historique:
pubmed: 4 1 2019
medline: 4 1 2019
entrez: 4 1 2019
Statut: ppublish

Résumé

Vanadium dioxide (VO

Identifiants

DOI: 10.1021/acsami.8b18745 PMID: 30604604
pubmed: 30604604
doi: 10.1021/acsami.8b18745
doi:

Types de publication

Journal Article

Langues

eng

Pagination

3224-3230

Auteurs

Mahito Yamamoto (M)

Institute of Scientific and Industrial Research , Osaka University , Ibaraki , Osaka 567-0047 , Japan.
ORCID: 0000-0003-4716-7855

Ryo Nouchi (R)

Graduate School of Engineering , Osaka Prefecture University , Sakai , Osaka 599-8570 , Japan.
JST PRESTO , Kawaguchi , Saitama 332-0012 , Japan.

Teruo Kanki (T)

Institute of Scientific and Industrial Research , Osaka University , Ibaraki , Osaka 567-0047 , Japan.

Azusa N Hattori (AN)

Institute of Scientific and Industrial Research , Osaka University , Ibaraki , Osaka 567-0047 , Japan.
JST PRESTO , Kawaguchi , Saitama 332-0012 , Japan.
ORCID: 0000-0002-5770-6026

Kenji Watanabe (K)

National Institute for Materials Science , Tsukuba , Ibaraki 305-0044 , Japan.

Takashi Taniguchi (T)

National Institute for Materials Science , Tsukuba , Ibaraki 305-0044 , Japan.

Keiji Ueno (K)

Department of Chemistry, Graduate School of Science and Engineering , Saitama University , Saitama 338-8570 , Japan.

Hidekazu Tanaka (H)

Institute of Scientific and Industrial Research , Osaka University , Ibaraki , Osaka 567-0047 , Japan.

Classifications MeSH