Germanium Quantum-Well Josephson Field-Effect Transistors and Interferometers.
Ge quantum well
Josephson field-effect transistor
proximity-effect-induced superconductivity
superconducting quantum interference device
two-dimensional hole gas
Journal
Nano letters
ISSN: 1530-6992
Titre abrégé: Nano Lett
Pays: United States
ID NLM: 101088070
Informations de publication
Date de publication:
13 02 2019
13 02 2019
Historique:
pubmed:
12
1
2019
medline:
12
1
2019
entrez:
12
1
2019
Statut:
ppublish
Résumé
Hybrid superconductor-semiconductor structures attract increasing attention owing to a variety of potential applications in quantum computing devices. They can serve the realization of topological superconducting systems as well as gate-tunable superconducting quantum bits. Here, we combine a SiGe/Ge/SiGe quantum-well heterostructure hosting high-mobility two-dimensional holes and aluminum superconducting leads to realize prototypical hybrid devices, such as Josephson field-effect transistors (JoFETs) and superconducting quantum interference devices (SQUIDs). We observe gate-controlled supercurrent transport with Ge channels as long as one micrometer and estimate the induced superconducting gap from tunnel spectroscopy measurements. Transmission electron microscopy reveals the diffusion of Ge into the Al contacts, whereas no Al is detected in the Ge channel.
Identifiants
pubmed: 30633528
doi: 10.1021/acs.nanolett.8b04275
doi:
Types de publication
Journal Article
Research Support, Non-U.S. Gov't
Research Support, U.S. Gov't, Non-P.H.S.
Langues
eng