Diluted Oxide Interfaces with Tunable Ground States.

2D electron liquid anomalous Hall effect metal-insulator transitions oxide interfaces superconductivity

Journal

Advanced materials (Deerfield Beach, Fla.)
ISSN: 1521-4095
Titre abrégé: Adv Mater
Pays: Germany
ID NLM: 9885358

Informations de publication

Date de publication:
Mar 2019
Historique:
received: 13 09 2018
revised: 31 12 2018
pubmed: 15 1 2019
medline: 15 1 2019
entrez: 15 1 2019
Statut: ppublish

Résumé

The metallic interface between two oxide insulators, such as LaAlO

Identifiants

pubmed: 30637817
doi: 10.1002/adma.201805970
doi:

Types de publication

Journal Article

Langues

eng

Pagination

e1805970

Subventions

Organisme : National Basic Research of China
ID : 2016YFA0300701
Organisme : National Natural Science Foundation of China
ID : 11520101002
Organisme : Geconcentreerde Onderzoekacties

Informations de copyright

© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Auteurs

Yulin Gan (Y)

Department of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, 4000, Roskilde, Denmark.

Dennis Valbjørn Christensen (DV)

Department of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, 4000, Roskilde, Denmark.

Yu Zhang (Y)

Department of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, 4000, Roskilde, Denmark.
National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.

Hongrui Zhang (H)

National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.

Dileep Krishnan (D)

EMAT, University of Antwerp, Groenenborgerlaan 171, 2020, Antwerp, Belgium.

Zhicheng Zhong (Z)

Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China.

Wei Niu (W)

Department of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, 4000, Roskilde, Denmark.

Damon James Carrad (DJ)

Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, 2100, Copenhagen, Denmark.

Kion Norrman (K)

Department of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, 4000, Roskilde, Denmark.

Merlin von Soosten (M)

Department of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, 4000, Roskilde, Denmark.
Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, 2100, Copenhagen, Denmark.

Thomas Sand Jespersen (TS)

Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, 2100, Copenhagen, Denmark.

Baogen Shen (B)

National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.

Nicolas Gauquelin (N)

EMAT, University of Antwerp, Groenenborgerlaan 171, 2020, Antwerp, Belgium.

Johan Verbeeck (J)

EMAT, University of Antwerp, Groenenborgerlaan 171, 2020, Antwerp, Belgium.

Jirong Sun (J)

National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.

Nini Pryds (N)

Department of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, 4000, Roskilde, Denmark.

Yunzhong Chen (Y)

Department of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, 4000, Roskilde, Denmark.

Classifications MeSH