Comprehensive analysis of the self-assembled formation of GaN nanowires on amorphous Al
Journal
Nanotechnology
ISSN: 1361-6528
Titre abrégé: Nanotechnology
Pays: England
ID NLM: 101241272
Informations de publication
Date de publication:
12 Apr 2019
12 Apr 2019
Historique:
pubmed:
15
1
2019
medline:
15
1
2019
entrez:
15
1
2019
Statut:
ppublish
Résumé
A comprehensive description of the self-assembled formation of GaN nanowires (NWs) by plasma-assisted molecular beam epitaxy (PAMBE) on amorphous-Al
Identifiants
pubmed: 30641512
doi: 10.1088/1361-6528/aafe17
doi:
Types de publication
Journal Article
Langues
eng