Copper Nanowire Dispersion through an Electrostatic Dispersion Mechanism for High-Performance Flexible Transparent Conducting Films and Optoelectronic Devices.

Highly dispersed copper nanowire (CuNW) is an essential prerequisite for its practical application in various electronic devices. At present, the dispersion of CuNW is almost realized through the steric hindrance effect of polymers. However, the high post-treatment temperature of polymers makes this dispersion mechanism impractical for many actual applications. Here, after investigating the relationship between the electrostatic dispersion force and influence factors, an electrostatic dispersion mechanism is refined by us. Under the guidance of this mechanism, high dispersion of CuNW and a record low post-treatment temperature (80 °C) are realized simultaneously. The high dispersity endows CuNW with good stability (-45.66 mV) in water-based ink, high uniformity (65.7 ± 2.5 Ω sq