Epitaxial Growth of Orthorhombic GaFeO₃ Thin Films on SrTiO₃ (111) Substrates by Simple Sol-Gel Method.
GaFeO3 film
epitaxial growth
magnetic property
multi-domain structure
sol-gel method
Journal
Materials (Basel, Switzerland)
ISSN: 1996-1944
Titre abrégé: Materials (Basel)
Pays: Switzerland
ID NLM: 101555929
Informations de publication
Date de publication:
14 Jan 2019
14 Jan 2019
Historique:
received:
17
11
2018
revised:
06
01
2019
accepted:
08
01
2019
entrez:
17
1
2019
pubmed:
17
1
2019
medline:
17
1
2019
Statut:
epublish
Résumé
A Sol-gel method assisted with spin-coating has been successfully used to grow orthorhombic GaFeO₃ epitaxial films on SrTiO₃ (111) substrates for the first time. The film with
Identifiants
pubmed: 30646559
pii: ma12020254
doi: 10.3390/ma12020254
pmc: PMC6356229
pii:
doi:
Types de publication
Journal Article
Langues
eng
Subventions
Organisme : National Nature Science Foundation of China
ID : 51602330
Organisme : National Nature Science Foundation of China
ID : 51472263
Organisme : Visiting Scholarship Fund of Chinese Academy of Sciences
ID : 2016113
Organisme : Shanghai Sailing Program
ID : 16YF1413100
Organisme : JSPS KAKENHI Grant-in-Aid for Young Scientist start-up
ID : TK 16H06794, MI 17H06240, SY 18K19126, MI 15H02292
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