Silicon carbide X-ray beam position monitors for synchrotron applications.

X-rays beam position monitors beamline instrumentation radiation detector silicon carbide

Journal

Journal of synchrotron radiation
ISSN: 1600-5775
Titre abrégé: J Synchrotron Radiat
Pays: United States
ID NLM: 9888878

Informations de publication

Date de publication:
01 Jan 2019
Historique:
received: 19 05 2018
accepted: 08 10 2018
entrez: 19 1 2019
pubmed: 19 1 2019
medline: 19 1 2019
Statut: ppublish

Résumé

In this work, the performance of thin silicon carbide membranes as material for radiation hard X-ray beam position monitors (XBPMs) is investigated. Thermal and electrical behavior of XBPMs made from thin silicon carbide membranes and single-crystal diamond is compared using finite-element simulations. Fabricated silicon carbide devices are also compared with a 12 µm commercial polycrystalline diamond XBPM at the Swiss Light Source at the Paul Scherrer Institute. Results show that silicon carbide devices can reach equivalent transparencies while showing improved linearity, dynamics and signal-to-noise ratio compared with commercial polycrystalline diamond XBPMs. Given the obtained results and availability of electronic-grade epitaxies on up to 6 inch wafers, it is expected that silicon carbide can substitute for diamond in most beam monitoring applications, whereas diamond, owing to its lower absorption, could remain the material of choice in cases of extreme X-ray power densities, such as pink and white beams.

Identifiants

pubmed: 30655465
pii: S1600577518014248
doi: 10.1107/S1600577518014248
pmc: PMC6337881
doi:

Types de publication

Journal Article

Langues

eng

Pagination

28-35

Informations de copyright

open access.

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Auteurs

Selamnesh Nida (S)

Advanced Power Semiconductor Laboratory, ETH Zurich, Zurich, Switzerland.

Alexander Tsibizov (A)

Advanced Power Semiconductor Laboratory, ETH Zurich, Zurich, Switzerland.

Thomas Ziemann (T)

Advanced Power Semiconductor Laboratory, ETH Zurich, Zurich, Switzerland.

Judith Woerle (J)

Advanced Power Semiconductor Laboratory, ETH Zurich, Zurich, Switzerland.

Andy Moesch (A)

DECTRIS Ltd, Baden-Daettwil, Switzerland.

Clemens Schulze-Briese (C)

DECTRIS Ltd, Baden-Daettwil, Switzerland.

Claude Pradervand (C)

Paul Scherrer Institute, Villigen, Switzerland.

Salvatore Tudisco (S)

INFN - Laboratori Nazionali del Sud, Catania, Italy.

Hans Sigg (H)

Paul Scherrer Institute, Villigen, Switzerland.

Oliver Bunk (O)

Paul Scherrer Institute, Villigen, Switzerland.

Ulrike Grossner (U)

Advanced Power Semiconductor Laboratory, ETH Zurich, Zurich, Switzerland.

Massimo Camarda (M)

Advanced Power Semiconductor Laboratory, ETH Zurich, Zurich, Switzerland.

Classifications MeSH