Video Monitoring Application of CMOS 4T-PPD-APS Under γ-ray Radiation.

4T-PPD-APS ionizing radiation radiation interference radiation response

Journal

Sensors (Basel, Switzerland)
ISSN: 1424-8220
Titre abrégé: Sensors (Basel)
Pays: Switzerland
ID NLM: 101204366

Informations de publication

Date de publication:
17 Jan 2019
Historique:
received: 25 12 2018
revised: 10 01 2019
accepted: 16 01 2019
entrez: 20 1 2019
pubmed: 20 1 2019
medline: 20 1 2019
Statut: epublish

Résumé

In this paper, we discuss the potential use of four transistor active pixel sensor (4T-APS) as a video monitor at a nuclear accident site with a high level of γ radiation. The resistance and radiation responses to γ radiation were investigated by radiation experiments using

Identifiants

DOI: 10.3390/s19020359 PMID: 30658404 PMC: PMC6359715
pubmed: 30658404
pii: s19020359
doi: 10.3390/s19020359
pmc: PMC6359715
pii:
doi:

Types de publication

Journal Article

Langues

eng

Auteurs

Shoulong Xu (S)

School of Resource Environment and Safety Engineering, University of South China, Hengyang 421001, China. xusl@usc.edu.cn.
Department of Engineering Physics, Tsinghua University, Beijing 100084, China. xusl@usc.edu.cn.
ORCID: 0000-0002-6614-9639

Shuliang Zou (S)

School of Resource Environment and Safety Engineering, University of South China, Hengyang 421001, China. kane880630@hotmail.com.

Yongchao Han (Y)

China Institute of Atomic Energy, Beijing 102413, China. hanyongchao@ciae.ac.cn.

Yantao Qu (Y)

China Institute of Atomic Energy, Beijing 102413, China. quyantao@ciae.ac.cn.

Taoyi Zhang (T)

Beijing Institute of Control Engineering, Beijing 100084, China. zhangtaoyi@sunwiserobot.com.

Classifications MeSH