Structural Controlling of Highly-Oriented Polycrystal 3C-SiC Bulks via Halide CVD.
3C-SiC
chemical vapor deposition (CVD)
orientation
surficial morphology
wettability
Journal
Materials (Basel, Switzerland)
ISSN: 1996-1944
Titre abrégé: Materials (Basel)
Pays: Switzerland
ID NLM: 101555929
Informations de publication
Date de publication:
27 Jan 2019
27 Jan 2019
Historique:
received:
28
12
2018
revised:
18
01
2019
accepted:
21
01
2019
entrez:
30
1
2019
pubmed:
30
1
2019
medline:
30
1
2019
Statut:
epublish
Résumé
Highly-oriented polycrystal 3C-SiC bulks were ultra-fast fabricated via halide chemical vapor deposition (CVD) using tetrachlorosilane (SiCl₄) and methane (CH₄) as precursors. The effects of deposition temperature (
Identifiants
pubmed: 30691185
pii: ma12030390
doi: 10.3390/ma12030390
pmc: PMC6384857
pii:
doi:
Types de publication
Journal Article
Langues
eng
Subventions
Organisme : National Natural Science Foundation of China
ID : 51372188, 51521001, 51861145306 and 51872212
Organisme : 111 Project
ID : B13035
Organisme : International Science and Technology Cooperation Programme of China
ID : 2014DFA53090
Organisme : Natural Science Foundation of Hubei Province
ID : 2016CFA006
Organisme : Fundamental Research Funds for the Central Universities
ID : WUT: 2017YB004, 2018III016
Organisme : Science Challenge Project
ID : TZ2016001
Organisme : State Key Laboratory of Advanced Technology for Materials Synthesis and Processing
ID : WUT, Grant No. 2019-KF-12
Déclaration de conflit d'intérêts
The authors have no conflicts to declare.