Model To Determine a Distinct Rate Constant for Carrier Multiplication from Experiments.


Journal

ACS applied energy materials
ISSN: 2574-0962
Titre abrégé: ACS Appl Energy Mater
Pays: United States
ID NLM: 101718976

Informations de publication

Date de publication:
28 Jan 2019
Historique:
received: 18 10 2018
accepted: 13 12 2018
entrez: 5 2 2019
pubmed: 5 2 2019
medline: 5 2 2019
Statut: ppublish

Résumé

Carrier multiplication (CM) is the process in which multiple electron-hole pairs are created upon absorption of a single photon in a semiconductor. CM by an initially hot charge carrier occurs in competition with cooling by phonon emission, with the respective rates determining the CM efficiency. Up until now, CM rates have only been calculated theoretically. We show for the first time how to extract a distinct CM rate constant from experimental data of the relaxation time of hot charge carriers and the yield of CM. We illustrate this method for PbSe quantum dots. Additionally, we provide a simplified method using an estimated energy loss rate to estimate the CM rate constant just above the onset of CM, when detailed experimental data of the relaxation time is missing.

Identifiants

pubmed: 30714025
doi: 10.1021/acsaem.8b01779
pmc: PMC6354726
doi:

Types de publication

Journal Article

Langues

eng

Pagination

721-728

Déclaration de conflit d'intérêts

The authors declare no competing financial interest.

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Auteurs

Frank C M Spoor (FCM)

Optoelectronic Materials Section, Department of Chemical Engineering, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The Netherlands.

Gianluca Grimaldi (G)

Optoelectronic Materials Section, Department of Chemical Engineering, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The Netherlands.

Sachin Kinge (S)

Toyota Motor Europe, Materials Research & Development, Hoge Wei 33, B-1930, Zaventem, Belgium.

Arjan J Houtepen (AJ)

Optoelectronic Materials Section, Department of Chemical Engineering, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The Netherlands.

Laurens D A Siebbeles (LDA)

Optoelectronic Materials Section, Department of Chemical Engineering, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The Netherlands.

Classifications MeSH