Light-Controlled Nanoscopic Writing of Electronic Memories Using the Tip-Enhanced Bulk Photovoltaic Effect.
atomic force microscopy
bulk photovoltaic effect
ferroelectric tunnel junction
nanoscopic optoelectronic memories
two-dimensional electron gas
Journal
ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991
Informations de publication
Date de publication:
27 Feb 2019
27 Feb 2019
Historique:
pubmed:
6
2
2019
medline:
6
2
2019
entrez:
6
2
2019
Statut:
ppublish
Résumé
The light control of nonvolatile nanoscale memories could represent a fundamental step toward novel optoelectronic devices with memory and logic functionalities. However, most of the proposed devices exhibit insufficient control in terms of the reversibility, data retention, photosensitivity, limited-photoactive area, and so forth. Here, in a proof-of-concept work, we demonstrate the use of the tip-enhanced bulk photovoltaic (BPV) effect to realize programmable nanoscopic writing of nonphotoactive electronic devices by light control. We show that electronic properties of solid-state memory devices can be reversibly and location-precisely manipulated in the nanoscale using the BPV effect in combination with the nanoscale contact connection, that is, atomic force microscopy (AFM) probe technique in this work. More than 10
Identifiants
pubmed: 30719908
doi: 10.1021/acsami.8b22638
doi:
Types de publication
Journal Article
Langues
eng