Light-Controlled Nanoscopic Writing of Electronic Memories Using the Tip-Enhanced Bulk Photovoltaic Effect.

atomic force microscopy bulk photovoltaic effect ferroelectric tunnel junction nanoscopic optoelectronic memories two-dimensional electron gas

Journal

ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991

Informations de publication

Date de publication:
27 Feb 2019
Historique:
pubmed: 6 2 2019
medline: 6 2 2019
entrez: 6 2 2019
Statut: ppublish

Résumé

The light control of nonvolatile nanoscale memories could represent a fundamental step toward novel optoelectronic devices with memory and logic functionalities. However, most of the proposed devices exhibit insufficient control in terms of the reversibility, data retention, photosensitivity, limited-photoactive area, and so forth. Here, in a proof-of-concept work, we demonstrate the use of the tip-enhanced bulk photovoltaic (BPV) effect to realize programmable nanoscopic writing of nonphotoactive electronic devices by light control. We show that electronic properties of solid-state memory devices can be reversibly and location-precisely manipulated in the nanoscale using the BPV effect in combination with the nanoscale contact connection, that is, atomic force microscopy (AFM) probe technique in this work. More than 10

Identifiants

pubmed: 30719908
doi: 10.1021/acsami.8b22638
doi:

Types de publication

Journal Article

Langues

eng

Pagination

8276-8283

Auteurs

Zheng-Dong Luo (ZD)

Department of Physics , University of Warwick , Coventry CV4 7AL , U.K.

Dae-Sung Park (DS)

Centre for Innovation Competence SiLi-nano , Martin-Luther-University Halle-Wittenberg , Halle (Saale) 06120 , Germany.

Ming-Min Yang (MM)

Department of Physics , University of Warwick , Coventry CV4 7AL , U.K.

Marin Alexe (M)

Department of Physics , University of Warwick , Coventry CV4 7AL , U.K.

Classifications MeSH