Electrically pumped photonic integrated soliton microcomb.


Journal

Nature communications
ISSN: 2041-1723
Titre abrégé: Nat Commun
Pays: England
ID NLM: 101528555

Informations de publication

Date de publication:
08 02 2019
Historique:
received: 02 12 2018
accepted: 04 01 2019
entrez: 10 2 2019
pubmed: 10 2 2019
medline: 10 2 2019
Statut: epublish

Résumé

Microcombs provide a path to broad-bandwidth integrated frequency combs with low power consumption, which are compatible with wafer-scale fabrication. Yet, electrically-driven, photonic chip-based microcombs are inhibited by the required high threshold power and the frequency agility of the laser for soliton initiation. Here we demonstrate an electrically-driven soliton microcomb by coupling a III-V-material-based (indium phosphide) multiple-longitudinal-mode laser diode chip to a high-Q silicon nitride microresonator fabricated using the photonic Damascene process. The laser diode is self-injection locked to the microresonator, which is accompanied by the narrowing of the laser linewidth, and the simultaneous formation of dissipative Kerr solitons. By tuning the laser diode current, we observe transitions from modulation instability, breather solitons, to single-soliton states. The system operating at an electronically-detectable sub-100-GHz mode spacing requires less than 1 Watt of electrical power, can fit in a volume of ca. 1 cm

Identifiants

pubmed: 30737384
doi: 10.1038/s41467-019-08498-2
pii: 10.1038/s41467-019-08498-2
pmc: PMC6368592
doi:

Types de publication

Journal Article Research Support, Non-U.S. Gov't

Langues

eng

Pagination

680

Commentaires et corrections

Type : ErratumIn

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Auteurs

Arslan S Raja (AS)

Swiss Federal Institute of Technology Lausanne (EPFL), 1015, Lausanne, Switzerland.

Andrey S Voloshin (AS)

Russian Quantum Center, Moscow, Russia, 143025.

Hairun Guo (H)

Swiss Federal Institute of Technology Lausanne (EPFL), 1015, Lausanne, Switzerland.
Key Laboratory of Specialty Fiber and Optical Access Networks, Shanghai University, 200343, Shanghai, China.

Sofya E Agafonova (SE)

Russian Quantum Center, Moscow, Russia, 143025.
Moscow Institute of Physics and Technology, Dolgoprudny, Russia, 141700.

Junqiu Liu (J)

Swiss Federal Institute of Technology Lausanne (EPFL), 1015, Lausanne, Switzerland.

Alexander S Gorodnitskiy (AS)

Russian Quantum Center, Moscow, Russia, 143025.
Moscow Institute of Physics and Technology, Dolgoprudny, Russia, 141700.

Maxim Karpov (M)

Swiss Federal Institute of Technology Lausanne (EPFL), 1015, Lausanne, Switzerland.

Nikolay G Pavlov (NG)

Russian Quantum Center, Moscow, Russia, 143025.
Moscow Institute of Physics and Technology, Dolgoprudny, Russia, 141700.

Erwan Lucas (E)

Swiss Federal Institute of Technology Lausanne (EPFL), 1015, Lausanne, Switzerland.

Ramzil R Galiev (RR)

Russian Quantum Center, Moscow, Russia, 143025.
Faculty of Physics, M.V. Lomonosov Moscow State University, Moscow, Russia, 119991.

Artem E Shitikov (AE)

Russian Quantum Center, Moscow, Russia, 143025.
Faculty of Physics, M.V. Lomonosov Moscow State University, Moscow, Russia, 119991.

John D Jost (JD)

Swiss Federal Institute of Technology Lausanne (EPFL), 1015, Lausanne, Switzerland.
MicroR Systems Sarl, 1003, Lausanne, Switzerland.

Michael L Gorodetsky (ML)

Russian Quantum Center, Moscow, Russia, 143025. mg@rqc.ru.
Faculty of Physics, M.V. Lomonosov Moscow State University, Moscow, Russia, 119991. mg@rqc.ru.

Tobias J Kippenberg (TJ)

Swiss Federal Institute of Technology Lausanne (EPFL), 1015, Lausanne, Switzerland. tobias.kippenberg@epfl.ch.

Classifications MeSH