Layer-Dependent Electronic Structure of Atomically Resolved Two-Dimensional Gallium Selenide Telluride.

2D semiconductor alloys GaSe0.5Te0.5 atomic structure electronic structure stacking order

Journal

Nano letters
ISSN: 1530-6992
Titre abrégé: Nano Lett
Pays: United States
ID NLM: 101088070

Informations de publication

Date de publication:
13 03 2019
Historique:
pubmed: 13 2 2019
medline: 13 2 2019
entrez: 13 2 2019
Statut: ppublish

Résumé

Alloying two-dimensional (2D) semiconductors provides a powerful method to tune their physical properties, especially those relevant to optoelectronic applications. However, as the crystal structure becomes more complex, it becomes increasingly difficult to accurately correlate response characteristics to detailed atomic structure. We investigate, via annular dark-field scanning transmission electron microscopy, electron energy loss spectroscopy, and second harmonic generation, the layered III-VI alloy GaSe

Identifiants

pubmed: 30746949
doi: 10.1021/acs.nanolett.8b04802
doi:

Types de publication

Journal Article Research Support, U.S. Gov't, Non-P.H.S. Research Support, Non-U.S. Gov't

Langues

eng

Pagination

1782-1787

Auteurs

Amin Azizi (A)

Department of Physics , University of California at Berkeley , Berkeley , California 94720 , United States.
Kavli Energy NanoScience Institute at the University of California , Berkeley, Berkeley , California 94720 , United States.

Gabriel Antonius (G)

Department of Physics , University of California at Berkeley , Berkeley , California 94720 , United States.
Département de Chimie, Biochimie et Physique, Institut de recherche sur l'hydrogène , Université du Québec à Trois-Rivières , Trois-Rivières , Québec G8Z 4M3 , Canada.

Emma Regan (E)

Department of Physics , University of California at Berkeley , Berkeley , California 94720 , United States.
Materials Sciences Division , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States.
Graduate Group in Applied Science and Technology , University of California at Berkeley , Berkeley , California 94720 , United States.

Rahmatollah Eskandari (R)

Department of Physics , University of California at Berkeley , Berkeley , California 94720 , United States.

Salman Kahn (S)

Department of Physics , University of California at Berkeley , Berkeley , California 94720 , United States.
Materials Sciences Division , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States.

Feng Wang (F)

Department of Physics , University of California at Berkeley , Berkeley , California 94720 , United States.
Kavli Energy NanoScience Institute at the University of California , Berkeley, Berkeley , California 94720 , United States.
Materials Sciences Division , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States.

Steven G Louie (SG)

Department of Physics , University of California at Berkeley , Berkeley , California 94720 , United States.
Materials Sciences Division , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States.

Alex Zettl (A)

Department of Physics , University of California at Berkeley , Berkeley , California 94720 , United States.
Kavli Energy NanoScience Institute at the University of California , Berkeley, Berkeley , California 94720 , United States.
Materials Sciences Division , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States.

Classifications MeSH