Layer-Dependent Electronic Structure of Atomically Resolved Two-Dimensional Gallium Selenide Telluride.
2D semiconductor alloys
GaSe0.5Te0.5
atomic structure
electronic structure
stacking order
Journal
Nano letters
ISSN: 1530-6992
Titre abrégé: Nano Lett
Pays: United States
ID NLM: 101088070
Informations de publication
Date de publication:
13 03 2019
13 03 2019
Historique:
pubmed:
13
2
2019
medline:
13
2
2019
entrez:
13
2
2019
Statut:
ppublish
Résumé
Alloying two-dimensional (2D) semiconductors provides a powerful method to tune their physical properties, especially those relevant to optoelectronic applications. However, as the crystal structure becomes more complex, it becomes increasingly difficult to accurately correlate response characteristics to detailed atomic structure. We investigate, via annular dark-field scanning transmission electron microscopy, electron energy loss spectroscopy, and second harmonic generation, the layered III-VI alloy GaSe
Identifiants
pubmed: 30746949
doi: 10.1021/acs.nanolett.8b04802
doi:
Types de publication
Journal Article
Research Support, U.S. Gov't, Non-P.H.S.
Research Support, Non-U.S. Gov't
Langues
eng