Defect-Controlled Nucleation and Orientation of WSe
chemical vapor deposition
defect-controlled
hexagonal boron nitride
inversion domain boundary
plasma
single atom vacancy
tungsten diselenide
Journal
ACS nano
ISSN: 1936-086X
Titre abrégé: ACS Nano
Pays: United States
ID NLM: 101313589
Informations de publication
Date de publication:
26 Mar 2019
26 Mar 2019
Historique:
pubmed:
14
2
2019
medline:
14
2
2019
entrez:
14
2
2019
Statut:
ppublish
Résumé
A defect-controlled approach for the nucleation and epitaxial growth of WSe
Identifiants
pubmed: 30758945
doi: 10.1021/acsnano.8b09230
doi:
Types de publication
Journal Article
Langues
eng