Coverage-driven phase transition of copper silicide monolayer on Si (111).
Copper silicide
Intensity-voltage (I-V)
Interstitial atoms
Low energy electron microscopy (LEEM)
Scanning tunneling microscopy (STM)
Substitution
Journal
Ultramicroscopy
ISSN: 1879-2723
Titre abrégé: Ultramicroscopy
Pays: Netherlands
ID NLM: 7513702
Informations de publication
Date de publication:
05 2019
05 2019
Historique:
received:
15
12
2018
accepted:
18
02
2019
pubmed:
2
3
2019
medline:
2
3
2019
entrez:
2
3
2019
Statut:
ppublish
Résumé
The characterization and control of atomic substitution process is crucial in fabricating high-quality two-dimensional layered compound materials and tuning their physical properties. With intensity-voltage low energy electron microscopy (IV-LEEM), we found that the concentration of copper in the topmost copper silicide monolayer on Si (111) substrates varies gradually from 1.7 to 1.0 ML while preserving it's unique '5 × 5' incommensurate phase in a transition region as large as 1000 nm. This gradual variation of the copper concentration is due to the incomplete substitution of the Si with Cu, as revealed by atomic-resolved scanning tunneling microscopy with a tip that nicely resolved the '5 × 5' periodicity. Our experiments indicate that besides the widely-accepted phase of Cu
Identifiants
pubmed: 30822615
pii: S0304-3991(18)30438-8
doi: 10.1016/j.ultramic.2019.02.019
pii:
doi:
Types de publication
Journal Article
Research Support, Non-U.S. Gov't
Langues
eng
Pagination
39-42Informations de copyright
Copyright © 2019 Elsevier B.V. All rights reserved.