Gate-based single-shot readout of spins in silicon.
Journal
Nature nanotechnology
ISSN: 1748-3395
Titre abrégé: Nat Nanotechnol
Pays: England
ID NLM: 101283273
Informations de publication
Date de publication:
05 2019
05 2019
Historique:
received:
01
10
2018
accepted:
01
02
2019
pubmed:
13
3
2019
medline:
13
3
2019
entrez:
13
3
2019
Statut:
ppublish
Résumé
Electron spins in silicon quantum dots provide a promising route towards realizing the large number of coupled qubits required for a useful quantum processor
Identifiants
pubmed: 30858520
doi: 10.1038/s41565-019-0400-7
pii: 10.1038/s41565-019-0400-7
doi:
Types de publication
Journal Article
Research Support, U.S. Gov't, Non-P.H.S.
Research Support, Non-U.S. Gov't
Langues
eng