Laser Writing of Scalable Single Color Centers in Silicon Carbide.
Silicon vacancy defect
arrays
laser writing
scalable
silicon carbide
Journal
Nano letters
ISSN: 1530-6992
Titre abrégé: Nano Lett
Pays: United States
ID NLM: 101088070
Informations de publication
Date de publication:
10 04 2019
10 04 2019
Historique:
pubmed:
19
3
2019
medline:
19
3
2019
entrez:
19
3
2019
Statut:
ppublish
Résumé
Single photon emitters in silicon carbide (SiC) are attracting attention as quantum photonic systems ( Awschalom et al. Nat. Photonics 2018 , 12 , 516 - 527 ; Atatüre et al. Nat. Rev. Mater. 2018 , 3 , 38 - 51 ). However, to achieve scalable devices, it is essential to generate single photon emitters at desired locations on demand. Here we report the controlled creation of single silicon vacancy (V
Identifiants
pubmed: 30882227
doi: 10.1021/acs.nanolett.8b05070
doi:
Types de publication
Journal Article
Research Support, Non-U.S. Gov't
Langues
eng