Graphene as an Ideal Buffer Layer for the Growth of High-Quality Ultrathin Cr

Metal-oxide nanostructures play a fundamental role in a large number of technological applications, ranging from chemical sensors to data storage devices. As the size of the devices shrinks down to the nanoscale, it is mandatory to obtain sharp and good quality interfaces. Here, it is shown that a two-dimensional material, namely, graphene, can be exploited as an ideal buffer layer to tailor the properties of the interface between a metallic substrate and an ultrathin oxide. This is proven at the interface between an ultrathin film of the magnetoelectric antiferromagnetic oxide Cr