Plasmonic Schottky photodetector with metal stripe embedded into semiconductor and with a CMOS-compatible titanium nitride.

Here we propose an original waveguide-integrated plasmonic Schottky photodetector that takes full advantage of a thin metal stripe embedded entirely into a semiconductor. The photodetector is based on the long-range dielectric-loaded surface plasmon polariton waveguide with a metal stripe deposited on top of a semiconductor rib and covered by another semiconductor. As the metal stripe is entirely surrounded by semiconductor, all hot electrons with appropriate k-vectors can participate in transitions that highly enhances the electron transfer, and consequently the internal quantum efficiency. In addition, a high coupling efficiency from the photonic waveguide to the photodetector is simulated exceeding 90 % which enhances the external quantum efficiency. Calculations show that a responsivity exceeding 0.5 A/W can be achieved at telecom wavelength of 1550 nm and the bandwidth can exceed 100 GHz. Furthermore, it is shown that titanium nitride is a perfect material for the photodetector as it provides a low Fermi energy and long electron mean free path that enhance the hot electron transfer to the semiconductor. In addition, it shows reasonable metallic behavior and CMOS compatibility. Measurements showed that the Schottky barrier height between titanium nitride and p-doped silicon reaches 0.69-0.70 eV that matches the optimum signal-to-noise ratio operation calculated at 0.697 eV.