Band Gap Tuning in Bismuth Oxide Carbodiimide Bi

Journal

Inorganic chemistry
ISSN: 1520-510X
Titre abrégé: Inorg Chem
Pays: United States
ID NLM: 0366543

Informations de publication

Date de publication:
06 May 2019
Historique:
pubmed: 17 4 2019
medline: 17 4 2019
entrez: 17 4 2019
Statut: ppublish

Résumé

Layered bismuth oxides exhibit a broad range of tunable physical properties as a result of their excellent structural versatility which facilitates compositional substitutions at both cationic and anionic positions. Here we expand this family in a new direction through the preparation of the first example of a bismuth-containing oxide carbodiimide, Bi

Identifiants

DOI: 10.1021/acs.inorgchem.9b00670 PMID: 30990029
pubmed: 30990029
doi: 10.1021/acs.inorgchem.9b00670
doi:

Types de publication

Journal Article

Langues

eng

Pagination

6467-6473

Auteurs

Alex J Corkett (AJ)

Chair of Solid-State and Quantum Chemistry, Institute of Inorganic Chemistry , RWTH Aachen University , 52056 Aachen , Germany.
ORCID: 0000-0002-7725-2498

Zheng Chen (Z)

Chair of Solid-State and Quantum Chemistry, Institute of Inorganic Chemistry , RWTH Aachen University , 52056 Aachen , Germany.
ORCID: 0000-0002-2021-3332

Dimitri Bogdanovski (D)

Chair of Solid-State and Quantum Chemistry, Institute of Inorganic Chemistry , RWTH Aachen University , 52056 Aachen , Germany.
ORCID: 0000-0001-8881-0777

Adam Slabon (A)

Department of Materials and Environmental Chemistry , Stockholm University , Svante Arrhenius väg 16 C , 106 91 Stockholm , Sweden.
ORCID: 0000-0002-4452-1831

Richard Dronskowski (R)

Chair of Solid-State and Quantum Chemistry, Institute of Inorganic Chemistry , RWTH Aachen University , 52056 Aachen , Germany.
Hoffmann Institute of Advanced Materials , Shenzhen Polytechnic , 7098 Liuxian Boulevard , Nanshan District, Shenzhen , China.
ORCID: 0000-0002-1925-9624

Classifications MeSH