Electron beam broadening in electron-transparent samples at low electron energies.
Electron beam broadening
LVSTEM
Low-energy STEM
STEM-in-SEM
Scanning transmission electron microscopy
TSEM
Journal
Journal of microscopy
ISSN: 1365-2818
Titre abrégé: J Microsc
Pays: England
ID NLM: 0204522
Informations de publication
Date de publication:
Jun 2019
Jun 2019
Historique:
received:
21
01
2019
revised:
08
04
2019
accepted:
10
04
2019
pubmed:
20
4
2019
medline:
20
4
2019
entrez:
20
4
2019
Statut:
ppublish
Résumé
Scanning transmission electron microscopy (STEM) at low primary electron energies has received increasing attention in recent years because knock-on damage can be avoided and high contrast for weakly scattering materials is obtained. However, the broadening of the electron beam in the sample is pronounced at low electron energies, which degrades resolution and limits the maximum specimen thickness. In this work, we have studied electron beam broadening in materials with atomic numbers Z between 10 and 32 (MgO, Si, SrTiO
Types de publication
Journal Article
Langues
eng
Pagination
150-157Subventions
Organisme : Deutsche Forschungsgemeinschaft
ID : Ge 841/20-2
Informations de copyright
© 2019 The Authors Journal of Microscopy © 2019 Royal Microscopical Society.