Halide Perovskite Nanocrystals for Next-Generation Optoelectronics.

nanocrystals optoelectronic devices perovskites photoluminescence photophysics

Journal

Small (Weinheim an der Bergstrasse, Germany)
ISSN: 1613-6829
Titre abrégé: Small
Pays: Germany
ID NLM: 101235338

Informations de publication

Date de publication:
Jul 2019
Historique:
received: 13 02 2019
revised: 28 03 2019
pubmed: 24 4 2019
medline: 24 4 2019
entrez: 24 4 2019
Statut: ppublish

Résumé

Colloidal perovskite nanocrystals (PNCs) combine the outstanding optoelectronic properties of bulk perovskites with strong quantum confinement effects at the nanoscale. Their facile and low-cost synthesis, together with superior photoluminescence quantum yields and exceptional optical versatility, make PNCs promising candidates for next-generation optoelectronics. However, this field is still in its early infancy and not yet ready for commercialization due to several open challenges to be addressed, such as toxicity and stability. Here, the key synthesis strategies and the tunable optical properties of PNCs are discussed. The photophysical underpinnings of PNCs, in correlation with recent developments of PNC-based optoelectronic devices, are especially highlighted. The final goal is to outline a theoretical scaffold for the design of high-performance devices that can at the same time address the commercialization challenges of PNC-based technology.

Identifiants

pubmed: 31012274
doi: 10.1002/smll.201900801
doi:

Types de publication

Journal Article Review

Langues

eng

Sous-ensembles de citation

IM

Pagination

e1900801

Subventions

Organisme : Jane and Aatos Erkko Foundation
Organisme : Business Finland
Organisme : Jane & Aatos Erkko foundation

Informations de copyright

© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Auteurs

Maning Liu (M)

Faculty of Engineering and Natural Sciences, Tampere University, P.O. Box 541, FI-33101, Tampere, Finland.

Haichang Zhang (H)

National and Local Joint Engineering Laboratory for Slag Comprehensive Utilization and Environmental Technology, School of Material Science and Engineering, Shanxi University of Technology, Hanzhong, 723001, P. R. China.

Dawit Gedamu (D)

École de Technologie Supérieure, Department of Electrical Engineering, 1100 rue Notre-Dame Ouest, Montréal, QC, H3C 1K3, Canada.

Paul Fourmont (P)

École de Technologie Supérieure, Department of Electrical Engineering, 1100 rue Notre-Dame Ouest, Montréal, QC, H3C 1K3, Canada.

Heikki Rekola (H)

Faculty of Engineering and Natural Sciences, Tampere University, P.O. Box 541, FI-33101, Tampere, Finland.

Arto Hiltunen (A)

Faculty of Engineering and Natural Sciences, Tampere University, P.O. Box 541, FI-33101, Tampere, Finland.

Sylvain G Cloutier (SG)

École de Technologie Supérieure, Department of Electrical Engineering, 1100 rue Notre-Dame Ouest, Montréal, QC, H3C 1K3, Canada.

Riad Nechache (R)

École de Technologie Supérieure, Department of Electrical Engineering, 1100 rue Notre-Dame Ouest, Montréal, QC, H3C 1K3, Canada.

Arri Priimagi (A)

Faculty of Engineering and Natural Sciences, Tampere University, P.O. Box 541, FI-33101, Tampere, Finland.

Paola Vivo (P)

Faculty of Engineering and Natural Sciences, Tampere University, P.O. Box 541, FI-33101, Tampere, Finland.

Classifications MeSH