Tunnel Field Effect Transistor with Ferroelectric Gate Insulator.

Journal

Journal of nanoscience and nanotechnology
ISSN: 1533-4880
Titre abrégé: J Nanosci Nanotechnol
Pays: United States
ID NLM: 101088195

Informations de publication

Date de publication:
01 Oct 2019
Historique:
entrez: 28 4 2019
pubmed: 28 4 2019
medline: 28 4 2019
Statut: ppublish

Résumé

Ferroelectric tunnel field effect transistor (Fe-TFET) having improved DC performance in comparison to the conventional TFET (c-TFET) is proposed and investigated through the technology computer-aided design (TCAD) simulation. By inserting ferroelectric material into the gate insulator of TFET, enhanced on-current (

Identifiants

DOI: 10.1166/jnn.2019.16994 PMID: 31026915
pubmed: 31026915
doi: 10.1166/jnn.2019.16994
doi:

Types de publication

Journal Article

Langues

eng

Pagination

6095-6098

Auteurs

Kitae Lee (K)

Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Republic of Korea.

Junil Lee (J)

Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Republic of Korea.

Sihyun Kim (S)

Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Republic of Korea.

Euyhwan Park (E)

Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Republic of Korea.

Ryoongbin Lee (R)

Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Republic of Korea.

Hyun-Min Kim (HM)

Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Republic of Korea.

Sangwan Kim (S)

Department of Electrical and Computer Engineering, Ajou University, Suwon 16449, Republic of Korea.

Byung-Gook Park (BG)

Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Republic of Korea.

Classifications MeSH