Carrier Mobility Calculation for Monolayer Black Phosphorous.
Journal
Journal of nanoscience and nanotechnology
ISSN: 1533-4880
Titre abrégé: J Nanosci Nanotechnol
Pays: United States
ID NLM: 101088195
Informations de publication
Date de publication:
01 Oct 2019
01 Oct 2019
Historique:
entrez:
28
4
2019
pubmed:
28
4
2019
medline:
28
4
2019
Statut:
ppublish
Résumé
Monolayer black phosphorous (BP) is a commonly used semiconducting two-dimensional material, thanks to its unique electronic properties of an atomically thin two-dimensional layered structure and its ability to be applied in a novel nanoscale metal-oxide-semiconductor field-effect device. In this paper, we focus on a new compact band structure model and apply it to electron mobility calculations for monolayer BP. We propose a new compact band model based on an effective mass approximation considering a second-order non-parabolic correction to calculate the band structure, density of states, velocity squared, and other physical quantities of monolayer BP. Electron mobility using the Kubo-Greenwood formula is calculated based on the new corrected compact band model. Our new compact band model is very useful to TCAD simulation and design of future transistor devices with monolayer BP.
Identifiants
pubmed: 31027036
doi: 10.1166/jnn.2019.17126
doi:
Types de publication
Journal Article
Langues
eng