Carrier Mobility Calculation for Monolayer Black Phosphorous.


Journal

Journal of nanoscience and nanotechnology
ISSN: 1533-4880
Titre abrégé: J Nanosci Nanotechnol
Pays: United States
ID NLM: 101088195

Informations de publication

Date de publication:
01 Oct 2019
Historique:
entrez: 28 4 2019
pubmed: 28 4 2019
medline: 28 4 2019
Statut: ppublish

Résumé

Monolayer black phosphorous (BP) is a commonly used semiconducting two-dimensional material, thanks to its unique electronic properties of an atomically thin two-dimensional layered structure and its ability to be applied in a novel nanoscale metal-oxide-semiconductor field-effect device. In this paper, we focus on a new compact band structure model and apply it to electron mobility calculations for monolayer BP. We propose a new compact band model based on an effective mass approximation considering a second-order non-parabolic correction to calculate the band structure, density of states, velocity squared, and other physical quantities of monolayer BP. Electron mobility using the Kubo-Greenwood formula is calculated based on the new corrected compact band model. Our new compact band model is very useful to TCAD simulation and design of future transistor devices with monolayer BP.

Identifiants

pubmed: 31027036
doi: 10.1166/jnn.2019.17126
doi:

Types de publication

Journal Article

Langues

eng

Pagination

6821-6825

Auteurs

Kuan-Ting Chen (KT)

Department of Electrical Engineering, National Chung Hsing University, Taichung 40227, Taiwan, R.O.C.

Min-Hsin Hsieh (MH)

Department of Electrical Engineering, National Chung Hsing University, Taichung 40227, Taiwan, R.O.C.

Yen-Shuo Su (YS)

Department of Electrical Engineering, National Chung Hsing University, Taichung 40227, Taiwan, R.O.C.

Wen-Jay Lee (WJ)

Department of Electrical Engineering, National Chung Hsing University, Taichung 40227, Taiwan, R.O.C.

Shu-Tong Chang (ST)

Department of Electrical Engineering, National Chung Hsing University, Taichung 40227, Taiwan, R.O.C.

Classifications MeSH