Pronounced Impact of
CSS
SEM
XRD
band gap
ion-exchange
p-type carriers
semiconductor thin films
solar cell
Journal
Materials (Basel, Switzerland)
ISSN: 1996-1944
Titre abrégé: Materials (Basel)
Pays: Switzerland
ID NLM: 101555929
Informations de publication
Date de publication:
25 Apr 2019
25 Apr 2019
Historique:
received:
11
02
2019
revised:
16
04
2019
accepted:
18
04
2019
entrez:
28
4
2019
pubmed:
28
4
2019
medline:
28
4
2019
Statut:
epublish
Résumé
Stabilized un-doped Zinc Telluride (ZnTe) thin films were grown on glass substrates under vacuum using a closed space sublimation (CSS) technique. A dilute copper nitrate solution (0.1/100 mL) was prepared for copper doping, known as an ion exchange process, in the matrix of the ZnTe thin film. The reproducible polycrystalline cubic structure of undoped and the Cu doped ZnTe thin films with preferred orientation (111) was confirmed by X-rays diffraction (XRD) technique. Lattice parameter analyses verified the expansion of unit cell volume after incorporation of Cu species into ZnTe thin films samples. The micrographs of scanning electron microscopy (SEM) were used to measure the variation in crystal sizes of samples. The energy dispersive X-rays were used to validate the elemental composition of undoped and Cu-doped ZnTe thin films. The bandgap energy 2.24 eV of the ZnTe thin film decreased after doping Cu to 2.20 eV and may be due to the introduction of acceptors states near to valance band. Optical studies showed that refractive index was measured from 2.18 to 3.24, whereas thicknesses varied between 220 nm to 320 nm for un-doped and Cu doped ZnTe thin film, respectively, using the Swanepoel model. The oxidation states of Zn
Identifiants
pubmed: 31027289
pii: ma12081359
doi: 10.3390/ma12081359
pmc: PMC6515456
pii:
doi:
Types de publication
Journal Article
Langues
eng
Références
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