High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide.


Journal

Nature communications
ISSN: 2041-1723
Titre abrégé: Nat Commun
Pays: England
ID NLM: 101528555

Informations de publication

Date de publication:
26 04 2019
Historique:
received: 23 10 2018
accepted: 04 04 2019
entrez: 28 4 2019
pubmed: 28 4 2019
medline: 28 4 2019
Statut: epublish

Résumé

Scalable quantum networking requires quantum systems with quantum processing capabilities. Solid state spin systems with reliable spin-optical interfaces are a leading hardware in this regard. However, available systems suffer from large electron-phonon interaction or fast spin dephasing. Here, we demonstrate that the negatively charged silicon-vacancy centre in silicon carbide is immune to both drawbacks. Thanks to its

Identifiants

pubmed: 31028260
doi: 10.1038/s41467-019-09873-9
pii: 10.1038/s41467-019-09873-9
pmc: PMC6486615
doi:

Types de publication

Journal Article Research Support, Non-U.S. Gov't

Langues

eng

Pagination

1954

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Auteurs

Roland Nagy (R)

3rd Institute of Physics, University of Stuttgart and Institute for Quantum Science and Technology IQST, 70569, Stuttgart, Germany.

Matthias Niethammer (M)

3rd Institute of Physics, University of Stuttgart and Institute for Quantum Science and Technology IQST, 70569, Stuttgart, Germany.

Matthias Widmann (M)

3rd Institute of Physics, University of Stuttgart and Institute for Quantum Science and Technology IQST, 70569, Stuttgart, Germany.

Yu-Chen Chen (YC)

3rd Institute of Physics, University of Stuttgart and Institute for Quantum Science and Technology IQST, 70569, Stuttgart, Germany.

Péter Udvarhelyi (P)

Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Hungarian Academy of Sciences, Budapest, PO Box 49, H-1525, Hungary.
Department of Biological Physics, Eötvös Loránd University, Pázmány Péter sétány 1/A, H-1117, Budapest, Hungary.

Cristian Bonato (C)

Institute of Photonics and Quantum Sciences, SUPA, Heriot-Watt University, Edinburgh, EH14 4AS, UK.

Jawad Ul Hassan (JU)

Department of Physics, Chemistry and Biology, Linköping University, SE-58183, Linköping, Sweden.

Robin Karhu (R)

Department of Physics, Chemistry and Biology, Linköping University, SE-58183, Linköping, Sweden.

Ivan G Ivanov (IG)

Department of Physics, Chemistry and Biology, Linköping University, SE-58183, Linköping, Sweden.

Nguyen Tien Son (NT)

Department of Physics, Chemistry and Biology, Linköping University, SE-58183, Linköping, Sweden.

Jeronimo R Maze (JR)

Facultad de Física, Pontificia Universidad Católica de Chile, Santiago, 7820436, Chile.
Research Center for Nanotechnology and Advanced Materials CIEN-UC, Pontificia Universidad Católica de Chile, Santiago, 7820436, Chile.

Takeshi Ohshima (T)

National Institutes for Quantum and Radiological Science and Technology, Takasaki, Gunma, 370-1292, Japan.

Öney O Soykal (ÖO)

Naval Research Laboratory, Washington, DC, 20375, USA.

Ádám Gali (Á)

Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Hungarian Academy of Sciences, Budapest, PO Box 49, H-1525, Hungary.
Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki út 8, H-1111, Budapest, Hungary.

Sang-Yun Lee (SY)

Center for Quantum Information, Korea Institute of Science and Technology, Seoul, 02792, Republic of Korea. sangyun.lee236@gmail.com.

Florian Kaiser (F)

3rd Institute of Physics, University of Stuttgart and Institute for Quantum Science and Technology IQST, 70569, Stuttgart, Germany. f.kaiser@pi3.uni-stuttgart.de.

Jörg Wrachtrup (J)

3rd Institute of Physics, University of Stuttgart and Institute for Quantum Science and Technology IQST, 70569, Stuttgart, Germany.

Classifications MeSH