Ferromagnetic Anomalous Hall Effect in Cr-Doped Bi

BiSe Chern number Topological insulator anomalous Hall effect ferromagnetism

Journal

Nano letters
ISSN: 1530-6992
Titre abrégé: Nano Lett
Pays: United States
ID NLM: 101088070

Informations de publication

Date de publication:
12 06 2019
Historique:
pubmed: 1 5 2019
medline: 1 5 2019
entrez: 1 5 2019
Statut: ppublish

Résumé

The anomalous Hall effect (AHE) is a nonlinear Hall effect appearing in magnetic conductors, boosted by internal magnetism beyond what is expected from the ordinary Hall effect. With the recent discovery of the quantized version of the AHE, the quantum anomalous Hall effect (QAHE), in Cr- or V-doped topological insulator (TI) (Sb,Bi)

Identifiants

pubmed: 31038971
doi: 10.1021/acs.nanolett.8b03745
doi:

Types de publication

Journal Article Research Support, Non-U.S. Gov't

Langues

eng

Pagination

3409-3414

Auteurs

Jisoo Moon (J)

Department of Physics and Astronomy , Rutgers, The State University of New Jersey , Piscataway , New Jersey 08854 , United States.

Jinwoong Kim (J)

Department of Physics and Astronomy , Rutgers, The State University of New Jersey , Piscataway , New Jersey 08854 , United States.

Nikesh Koirala (N)

Department of Physics and Astronomy , Rutgers, The State University of New Jersey , Piscataway , New Jersey 08854 , United States.

Maryam Salehi (M)

Department of Materials Science and Engineering , Rutgers, The State University of New Jersey , Piscataway , New Jersey 08854 , United States.

David Vanderbilt (D)

Department of Physics and Astronomy , Rutgers, The State University of New Jersey , Piscataway , New Jersey 08854 , United States.

Seongshik Oh (S)

Department of Physics and Astronomy , Rutgers, The State University of New Jersey , Piscataway , New Jersey 08854 , United States.

Classifications MeSH