An Overview of Normally-Off GaN-Based High Electron Mobility Transistors.
gallium nitride
normally-off HEMT
power electronics
Journal
Materials (Basel, Switzerland)
ISSN: 1996-1944
Titre abrégé: Materials (Basel)
Pays: Switzerland
ID NLM: 101555929
Informations de publication
Date de publication:
15 May 2019
15 May 2019
Historique:
received:
16
04
2019
revised:
08
05
2019
accepted:
14
05
2019
entrez:
18
5
2019
pubmed:
18
5
2019
medline:
18
5
2019
Statut:
epublish
Résumé
Today, the introduction of wide band gap (WBG) semiconductors in power electronics has become mandatory to improve the energy efficiency of devices and modules and to reduce the overall electric power consumption in the world. Due to its excellent properties, gallium nitride (GaN) and related alloys (e.g., Al
Identifiants
pubmed: 31096689
pii: ma12101599
doi: 10.3390/ma12101599
pmc: PMC6567103
pii:
doi:
Types de publication
Journal Article
Review
Langues
eng
Subventions
Organisme : Italian Ministry for Education, University and Research (MIUR) - National Project PON EleGaNTe (Electronics on GaN-based Technologies)
ID : ARS01_01007
Déclaration de conflit d'intérêts
The authors declare no conflict of interest.
Références
Nanoscale Res Lett. 2011 Feb 11;6(1):132
pubmed: 21711655
ACS Appl Mater Interfaces. 2017 Oct 11;9(40):35383-35390
pubmed: 28920438