The Characteristics of Transparent Non-Volatile Memory Devices Employing Si-Rich SiO
ITZO
NVM
charge trapping
memory window
retention
transparent
Journal
Nanomaterials (Basel, Switzerland)
ISSN: 2079-4991
Titre abrégé: Nanomaterials (Basel)
Pays: Switzerland
ID NLM: 101610216
Informations de publication
Date de publication:
22 May 2019
22 May 2019
Historique:
received:
07
04
2019
revised:
08
05
2019
accepted:
20
05
2019
entrez:
25
5
2019
pubmed:
28
5
2019
medline:
28
5
2019
Statut:
epublish
Résumé
We fabricated the transparent non-volatile memory (NVM) of a bottom gate thin film transistor (TFT) for the integrated logic devices of display applications. The NVM TFT utilized indium-tin-zinc-oxide (ITZO) as an active channel layer and multi-oxide structure of SiO
Identifiants
pubmed: 31121917
pii: nano9050784
doi: 10.3390/nano9050784
pmc: PMC6566947
pii:
doi:
Types de publication
Journal Article
Langues
eng