Anomalous Electron Dynamics Induced through the Valley Magnetic Domain: A Pathway to Valleytronic Current Processing.

Valley magnetoelectric effect anomalous transverse current symmetry-broken transverse diode valley Hall effect valley magnetic domain

Journal

Nano letters
ISSN: 1530-6992
Titre abrégé: Nano Lett
Pays: United States
ID NLM: 101088070

Informations de publication

Date de publication:
12 06 2019
Historique:
pubmed: 1 6 2019
medline: 1 6 2019
entrez: 1 6 2019
Statut: ppublish

Résumé

An interplay between an applied strain and the Berry curvature reconstruction in the uniaxially strained monolayer MoS

Identifiants

pubmed: 31148458
doi: 10.1021/acs.nanolett.9b01676
doi:

Types de publication

Journal Article Research Support, Non-U.S. Gov't

Langues

eng

Pagination

4166-4173

Auteurs

Youngjae Kim (Y)

Department of Emerging Materials Science , DGIST , Daegu 42988 , Korea.

J D Lee (JD)

Department of Emerging Materials Science , DGIST , Daegu 42988 , Korea.

Classifications MeSH