A corner reflector of graphene Dirac fermions as a phonon-scattering sensor.


Journal

Nature communications
ISSN: 2041-1723
Titre abrégé: Nat Commun
Pays: England
ID NLM: 101528555

Informations de publication

Date de publication:
03 06 2019
Historique:
received: 07 01 2019
accepted: 30 04 2019
entrez: 5 6 2019
pubmed: 5 6 2019
medline: 5 6 2019
Statut: epublish

Résumé

Dirac fermion optics exploits the refraction of chiral fermions across optics-inspired Klein-tunneling barriers defined by high-transparency p-n junctions. We consider the corner reflector (CR) geometry introduced in optics or radars. We fabricate Dirac fermion CRs using bottom-gate-defined barriers in hBN-encapsulated graphene. By suppressing transmission upon multiple internal reflections, CRs are sensitive to minute phonon scattering rates. Here we report on doping-independent CR transmission in quantitative agreement with a simple scattering model including thermal phonon scattering. As a signature of CRs, we observe Fabry-Pérot oscillations at low temperature, consistent with single-path reflections. Finally, we demonstrate high-frequency operation which promotes CRs as fast phonon detectors. Our work establishes the relevance of Dirac fermion optics in graphene and opens a route for its implementation in topological Dirac matter.

Identifiants

pubmed: 31160597
doi: 10.1038/s41467-019-10326-6
pii: 10.1038/s41467-019-10326-6
pmc: PMC6547877
doi:

Types de publication

Journal Article Research Support, Non-U.S. Gov't

Langues

eng

Pagination

2428

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Auteurs

H Graef (H)

Laboratoire de Physique de l'Ecole normale supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris-Diderot, Sorbonne Paris Cité, Paris, 75005, France.
CINTRA, UMI 3288, CNRS/NTU/Thales, Research Techno Plaza, 50 Nanyang Drive, Singapore, 637553, Singapore.
School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.

Q Wilmart (Q)

Laboratoire de Physique de l'Ecole normale supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris-Diderot, Sorbonne Paris Cité, Paris, 75005, France.

M Rosticher (M)

Laboratoire de Physique de l'Ecole normale supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris-Diderot, Sorbonne Paris Cité, Paris, 75005, France.

D Mele (D)

Laboratoire de Physique de l'Ecole normale supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris-Diderot, Sorbonne Paris Cité, Paris, 75005, France.

L Banszerus (L)

2nd Institute of Physics, RWTH Aachen University, 52074, Aachen, Germany.

C Stampfer (C)

2nd Institute of Physics, RWTH Aachen University, 52074, Aachen, Germany.

T Taniguchi (T)

Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, 305-0047, Ibaraki, Japan.

K Watanabe (K)

Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, 305-0047, Ibaraki, Japan.

J-M Berroir (JM)

Laboratoire de Physique de l'Ecole normale supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris-Diderot, Sorbonne Paris Cité, Paris, 75005, France.

E Bocquillon (E)

Laboratoire de Physique de l'Ecole normale supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris-Diderot, Sorbonne Paris Cité, Paris, 75005, France.

G Fève (G)

Laboratoire de Physique de l'Ecole normale supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris-Diderot, Sorbonne Paris Cité, Paris, 75005, France.

E H T Teo (EHT)

School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.

B Plaçais (B)

Laboratoire de Physique de l'Ecole normale supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris-Diderot, Sorbonne Paris Cité, Paris, 75005, France. bernard.placais@lpa.ens.fr.

Classifications MeSH