Cross-dimensional electron-phonon coupling in van der Waals heterostructures.


Journal

Nature communications
ISSN: 2041-1723
Titre abrégé: Nat Commun
Pays: England
ID NLM: 101528555

Informations de publication

Date de publication:
03 06 2019
Historique:
received: 14 02 2019
accepted: 08 05 2019
entrez: 5 6 2019
pubmed: 5 6 2019
medline: 5 6 2019
Statut: epublish

Résumé

The electron-phonon coupling (EPC) in a material is at the frontier of the fundamental research, underlying many quantum behaviors. van der Waals heterostructures (vdWHs) provide an ideal platform to reveal the intrinsic interaction between their electrons and phonons. In particular, the flexible van der Waals stacking of different atomic crystals leads to multiple opportunities to engineer the interlayer phonon modes for EPC. Here, in hBN/WS

Identifiants

pubmed: 31160599
doi: 10.1038/s41467-019-10400-z
pii: 10.1038/s41467-019-10400-z
pmc: PMC6546732
doi:

Types de publication

Journal Article Research Support, Non-U.S. Gov't

Langues

eng

Pagination

2419

Subventions

Organisme : National Natural Science Foundation of China (National Science Foundation of China)
ID : 11874350
Pays : International

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Auteurs

Miao-Ling Lin (ML)

State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, China.
Center of Materials Science and Optoelectronics Engineering & CAS Center of Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, 100049, Beijing, China.

Yu Zhou (Y)

Key Laboratory of Flexible Electronics and Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, 211816, Nanjing, China.

Jiang-Bin Wu (JB)

State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, China.

Xin Cong (X)

State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, China.
Center of Materials Science and Optoelectronics Engineering & CAS Center of Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, 100049, Beijing, China.

Xue-Lu Liu (XL)

State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, China.
Center of Materials Science and Optoelectronics Engineering & CAS Center of Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, 100049, Beijing, China.

Jun Zhang (J)

State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, China.
Center of Materials Science and Optoelectronics Engineering & CAS Center of Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, 100049, Beijing, China.
Beijing Academy of Quantum Information Science, 100193, Beijing, China.

Hai Li (H)

Key Laboratory of Flexible Electronics and Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, 211816, Nanjing, China.

Wang Yao (W)

Department of Physics and Centre of Theoretical and Computational Physics, University of Hong Kong, Hong Kong, China.

Ping-Heng Tan (PH)

State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, China. phtan@semi.ac.cn.
Center of Materials Science and Optoelectronics Engineering & CAS Center of Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, 100049, Beijing, China. phtan@semi.ac.cn.
Beijing Academy of Quantum Information Science, 100193, Beijing, China. phtan@semi.ac.cn.

Classifications MeSH