Room-Temperature Electron Transport in Self-Assembled Sheets of PbSe Nanocrystals with a Honeycomb Nanogeometry.


Journal

The journal of physical chemistry. C, Nanomaterials and interfaces
ISSN: 1932-7447
Titre abrégé: J Phys Chem C Nanomater Interfaces
Pays: United States
ID NLM: 101299949

Informations de publication

Date de publication:
06 Jun 2019
Historique:
received: 15 04 2019
entrez: 18 6 2019
pubmed: 18 6 2019
medline: 18 6 2019
Statut: ppublish

Résumé

It has been shown recently that atomically coherent superstructures of a nanocrystal monolayer in thickness can be prepared by self-assembly of monodisperse PbSe nanocrystals, followed by oriented attachment. Superstructures with a honeycomb nanogeometry are of special interest, as theory has shown that they are regular 2-D semiconductors, but with the highest valence and lowest conduction bands being Dirac-type, that is, with a linear energy-momentum relation around the K-points in the zone. Experimental validation will require cryogenic measurements on single sheets of these nanocrystal monolayer superstructures. Here, we show that we can incorporate these fragile superstructures into a transistor device with electrolyte gating, control the electron density, and measure the electron transport characteristics at room temperature. The electron mobility is 1.5 ± 0.5 cm

Identifiants

pubmed: 31205579
doi: 10.1021/acs.jpcc.9b03549
pmc: PMC6559210
doi:

Types de publication

Journal Article

Langues

eng

Pagination

14058-14066

Déclaration de conflit d'intérêts

The authors declare no competing financial interest.

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Auteurs

Maryam Alimoradi Jazi (M)

Debye Institute for Nanomaterials Science, University of Utrecht, Princetonplein 1, 3584 CC, Utrecht, The Netherlands.

Aditya Kulkarni (A)

Optoelectronic Materials Section, Department of Chemical Engineering, Delft University of Technology, Van der Maasweg 9, 2629 HZ, Delft, The Netherlands.

Sophia Buhbut Sinai (SB)

Debye Institute for Nanomaterials Science, University of Utrecht, Princetonplein 1, 3584 CC, Utrecht, The Netherlands.

Joep L Peters (JL)

Debye Institute for Nanomaterials Science, University of Utrecht, Princetonplein 1, 3584 CC, Utrecht, The Netherlands.

Eva Geschiere (E)

Optoelectronic Materials Section, Department of Chemical Engineering, Delft University of Technology, Van der Maasweg 9, 2629 HZ, Delft, The Netherlands.

Michele Failla (M)

Optoelectronic Materials Section, Department of Chemical Engineering, Delft University of Technology, Van der Maasweg 9, 2629 HZ, Delft, The Netherlands.

Christophe Delerue (C)

IEMN, Department of ISEN, UMR CNRS 8520, 59046 Lille, France.

Arjan J Houtepen (AJ)

Optoelectronic Materials Section, Department of Chemical Engineering, Delft University of Technology, Van der Maasweg 9, 2629 HZ, Delft, The Netherlands.

Laurens D A Siebbeles (LDA)

Optoelectronic Materials Section, Department of Chemical Engineering, Delft University of Technology, Van der Maasweg 9, 2629 HZ, Delft, The Netherlands.

Daniel Vanmaekelbergh (D)

Debye Institute for Nanomaterials Science, University of Utrecht, Princetonplein 1, 3584 CC, Utrecht, The Netherlands.

Classifications MeSH