Shifted Excitation Raman Difference Spectroscopy with Charge-Shifting Charge-Coupled Device (CCD) Lock-In Detection.

Raman spectroscopy SERDS SORS optical lock-in detection sample heterogeneity shifted excitation Raman difference spectroscopy spatially offset Raman spectroscopy

Journal

Applied spectroscopy
ISSN: 1943-3530
Titre abrégé: Appl Spectrosc
Pays: United States
ID NLM: 0372406

Informations de publication

Date de publication:
Nov 2019
Historique:
pubmed: 21 6 2019
medline: 21 6 2019
entrez: 21 6 2019
Statut: ppublish

Résumé

Shifted excitation Raman difference spectroscopy (SERDS) can provide effective, chemically specific information on fluorescent samples. However, the restricted ability for fast alternating detection (usually < 10 Hz) of spectra excited at two shifted laser wavelengths can limit its effectiveness when rapidly varying emission backgrounds are present. This paper presents a novel charge-shifting lock-in approach permitting fast SERDS operation (exemplarily demonstrated at 1000 Hz) using a specialized dual-wavelength diode laser (emitting at 829.40 nm and 828.85 nm) and a custom-built charge-coupled device (CCD) enabling charge retention and shifting back and forth on the CCD chip. For six selected mineral samples (moved irregularly during spectral acquisition), results demonstrate superior reproducibility of the fast charge-shifting read-out over the conventional read-out (operated at 5.4 Hz). Partial least squares discriminant analysis revealed improved classification performance of charge-shifting (four latent variables, sensitivity: 99%, specificity: 94%) versus conventional read-out (six latent variables, sensitivity: 90%, specificity: 92%). The charge-shifting concept was also successfully translated to sub-surface analysis using spatially offset Raman spectroscopy (SORS). Charge-shifting SERDS-SORS spectra recorded from a polytetrafluoroethylene layer, concealed behind a 0.25 mm thick, opaque, heterogeneous layer, matched reference spectra much more closely and exhibited a signal-to-background-noise (S/N

Identifiants

pubmed: 31219325
doi: 10.1177/0003702819859352
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

1265-1276

Auteurs

Kay Sowoidnich (K)

Central Laser Facility, Research Complex at Harwell, STFC Rutherford Appleton Laboratory, UKRI, Oxford, UK.
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany.

Michael Towrie (M)

Central Laser Facility, Research Complex at Harwell, STFC Rutherford Appleton Laboratory, UKRI, Oxford, UK.

Martin Maiwald (M)

Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany.

Bernd Sumpf (B)

Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany.

Pavel Matousek (P)

Central Laser Facility, Research Complex at Harwell, STFC Rutherford Appleton Laboratory, UKRI, Oxford, UK.

Classifications MeSH