Role of hole confinement in the recombination properties of InGaN quantum structures.
Journal
Scientific reports
ISSN: 2045-2322
Titre abrégé: Sci Rep
Pays: England
ID NLM: 101563288
Informations de publication
Date de publication:
21 Jun 2019
21 Jun 2019
Historique:
received:
06
03
2019
accepted:
21
05
2019
entrez:
23
6
2019
pubmed:
23
6
2019
medline:
23
6
2019
Statut:
epublish
Résumé
We study the isolated contribution of hole localization for well-known charge carrier recombination properties observed in conventional, polar InGaN quantum wells (QWs). This involves the interplay of charge carrier localization and non-radiative transitions, a non-exponential decay of the emission and a specific temperature dependence of the emission, denoted as "s-shape". We investigate two dimensional In
Identifiants
pubmed: 31227738
doi: 10.1038/s41598-019-45218-8
pii: 10.1038/s41598-019-45218-8
pmc: PMC6588636
doi:
Types de publication
Journal Article
Langues
eng
Pagination
9047Subventions
Organisme : EC | Horizon 2020 Framework Programme (EU Framework Programme for Research and Innovation H2020)
ID : No. 642574
Organisme : EC | Horizon 2020 Framework Programme (EU Framework Programme for Research and Innovation H2020)
ID : No. 642574
Organisme : EC | Horizon 2020 Framework Programme (EU Framework Programme for Research and Innovation H2020)
ID : No. 642574
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