Strongly Hole-Doped and Highly Decoupled Graphene on Platinum by Water Intercalation.


Journal

The journal of physical chemistry letters
ISSN: 1948-7185
Titre abrégé: J Phys Chem Lett
Pays: United States
ID NLM: 101526034

Informations de publication

Date de publication:
18 Jul 2019
Historique:
pubmed: 2 7 2019
medline: 2 7 2019
entrez: 2 7 2019
Statut: ppublish

Résumé

Scanning tunneling microscopy and spectroscopy experiments under ultrahigh vacuum and low-temperature conditions have been performed on water-intercalated graphene on Pt(111). We find that the confined water layer, with a thickness around 0.35 nm, induces a strong hole doping in graphene, i.e., the Dirac point locates at round 0.64 eV above the Fermi level. This can be explained by the presence of a single "puckered bilayer" of ice-Ih, which has not been experimentally found on bare Pt(111), being confined in between graphene and Pt(111) surface. Moreover, the water intercalation makes graphene highly decoupled from the substrate, allowing us to reveal the intrinsic graphene phonons and double Rydberg series of even and odd symmetry image-potential states. Our work not only demonstrates that the electronic properties of graphene can be tuned by the confined water layer between graphene and the substrate, but also provides a generally applicable method to study the intrinsic properties of graphene as well as of other supported two-dimensional materials.

Identifiants

pubmed: 31260314
doi: 10.1021/acs.jpclett.9b01488
doi:

Types de publication

Journal Article

Langues

eng

Pagination

3998-4002

Auteurs

Zhe Li (Z)

State Key Laboratory on Tunable Laser Technology, Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, School of Science , Harbin Institute of Technology (Shenzhen) , Shenzhen 518055 , China.

Shiqi Li (S)

Key Laboratory of Materials Modification by Laser , Ion and Electron Beams(Dalian University of Technology) , Ministry of Education, Dalian 116024 , China.

Hsin-Yi Tiffany Chen (HT)

Department of Engineering and System Science , National Tsing Hua University , Hsinchu 30010 , Taiwan.

Nan Gao (N)

Key Laboratory of Materials Modification by Laser , Ion and Electron Beams(Dalian University of Technology) , Ministry of Education, Dalian 116024 , China.

Koen Schouteden (K)

Laboratory of Solid-State Physics and Magnetism , KU Leuven , BE-3001 Leuven , Belgium.

Xiaoming Qiang (X)

Key Laboratory of Materials Modification by Laser , Ion and Electron Beams(Dalian University of Technology) , Ministry of Education, Dalian 116024 , China.

Jijun Zhao (J)

Key Laboratory of Materials Modification by Laser , Ion and Electron Beams(Dalian University of Technology) , Ministry of Education, Dalian 116024 , China.

Steven Brems (S)

Interuniversitair Micro-Electronica Centrum (imec) vzw , Kapeldreef 75 , BE-3001 Leuven , Belgium.

Cedric Huyghebaert (C)

Interuniversitair Micro-Electronica Centrum (imec) vzw , Kapeldreef 75 , BE-3001 Leuven , Belgium.

Chris Van Haesendonck (C)

Laboratory of Solid-State Physics and Magnetism , KU Leuven , BE-3001 Leuven , Belgium.

Classifications MeSH