Composition determination for quaternary III-V semiconductors by aberration-corrected STEM.
Composition determination
Image simulation
Quantitative STEM
Quaternary III-V semiconductors
Journal
Ultramicroscopy
ISSN: 1879-2723
Titre abrégé: Ultramicroscopy
Pays: Netherlands
ID NLM: 7513702
Informations de publication
Date de publication:
Nov 2019
Nov 2019
Historique:
received:
25
04
2019
revised:
04
07
2019
accepted:
07
07
2019
pubmed:
17
7
2019
medline:
17
7
2019
entrez:
17
7
2019
Statut:
ppublish
Résumé
Quantitative scanning transmission electron microscopy (STEM) is a powerful tool for the characterization of nano-materials. Absolute composition determination for ternary III-V semiconductors by direct comparison of experiment and simulation is well established. Here, we show a method to determine the composition of quaternary III-V semiconductors with two elements on each sub lattice from the intensities of one STEM image. As an example, this is applied to (GaIn)(AsBi). The feasibility of the method is shown in a simulation study that also explores the influence of detector angles and specimen thickness. Additionally, the method is applied to an experimental STEM image of a (GaIn)(AsBi) quantum well grown by metal organic vapour phase epitaxy. The obtained concentrations are in good agreement with X-ray diffraction and photoluminescence results.
Identifiants
pubmed: 31310886
pii: S0304-3991(19)30121-4
doi: 10.1016/j.ultramic.2019.112814
pii:
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
112814Informations de copyright
Copyright © 2019 Elsevier B.V. All rights reserved.