Localized surface curvature artifacts in tip-enhanced nanospectroscopy imaging.

Imaging artifacts Nanospectroscopy Plasmonics Scanning probe microscopy TERS

Journal

Ultramicroscopy
ISSN: 1879-2723
Titre abrégé: Ultramicroscopy
Pays: Netherlands
ID NLM: 7513702

Informations de publication

Date de publication:
Nov 2019
Historique:
received: 12 03 2019
revised: 26 06 2019
accepted: 04 07 2019
pubmed: 17 7 2019
medline: 17 7 2019
entrez: 17 7 2019
Statut: ppublish

Résumé

Tip-enhanced Raman spectroscopy (TERS) allows the chemical analysis with a spatial resolution at the nanoscale, well beyond what the diffraction limit of light makes possible. We can further boost the TERS sensitivity by using a metallic substrate in the so-called gap-mode TERS. In this context, the goal of this work is to provide a generalized view of imaging artifacts in TERS and near-field imaging that occur due to tip-sample coupling. Contrary to the case of gap-mode with a flat substrate where the size of the enhanced region is smaller than the tip size when visualizing 3D nanostructures the tip convolution effect may broaden the observed dimensions due to the local curvature of the sample. This effect is particularly critical considering that most works on gap-mode TERS consider a perfectly flat substrate which is rarely the case in actual experiments. We investigate a range of substrates to evidence these geometrical effects and to obtain an understanding of the nanoscale curvature role in TERS imaging. Our experimental results are complemented by numerical simulations and an analogy with atomic force microscopy artifacts is introduced. As a result, this work offers a useful analysis of gap-mode TERS imaging with tip- and substrate-related artifacts furthering our understanding and the reliability of near-field optical nanospectroscopy.

Identifiants

pubmed: 31310887
pii: S0304-3991(19)30086-5
doi: 10.1016/j.ultramic.2019.112811
pii:
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

112811

Informations de copyright

Copyright © 2019 Elsevier B.V. All rights reserved.

Auteurs

E Sheremet (E)

Tomsk Polytechnic University, 30 Lenin Ave, 634050 Tomsk, Russia.

L Kim (L)

Tomsk Polytechnic University, 30 Lenin Ave, 634050 Tomsk, Russia.

D Stepanichsheva (D)

Tomsk Polytechnic University, 30 Lenin Ave, 634050 Tomsk, Russia.

V Kolchuzhin (V)

Qorvo Munich GmbH, Konrad-Zuse-Platz 1, D-81829 Munich, Germany; Chemnitz University of Technology, D-09107 Chemnitz, Germany.

A Milekhin (A)

Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS, 630090 Novosibirsk, Russia.

D R T Zahn (DRT)

Chemnitz University of Technology, D-09107 Chemnitz, Germany.

R D Rodriguez (RD)

Tomsk Polytechnic University, 30 Lenin Ave, 634050 Tomsk, Russia. Electronic address: raul@tpu.ru.

Classifications MeSH