Ultrathin Free-Standing Nanosheets of Bi
Bismuth oxyselenide
charged layered heterostructure
ferroelectricity
high-mobility semiconductor
spontaneous distortion
two-dimensional materials
Journal
Nano letters
ISSN: 1530-6992
Titre abrégé: Nano Lett
Pays: United States
ID NLM: 101088070
Informations de publication
Date de publication:
14 Aug 2019
14 Aug 2019
Historique:
pubmed:
28
7
2019
medline:
28
7
2019
entrez:
27
7
2019
Statut:
ppublish
Résumé
Ultrathin ferroelectric semiconductors with high charge carrier mobility are much coveted systems for the advancement of various electronic and optoelectronic devices. However, in traditional oxide ferroelectric insulators, the ferroelectric transition temperature decreases drastically with decreasing material thickness and ceases to exist below certain critical thickness owing to depolarizing fields. Herein, we show the emergence of an ordered ferroelectric ground state in ultrathin (∼2 nm) single crystalline nanosheets of Bi
Identifiants
pubmed: 31347854
doi: 10.1021/acs.nanolett.9b02312
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM