Phonon Polaritons in Monolayers of Hexagonal Boron Nitride.

monolayers phonon polaritons van der Waals materials

Journal

Advanced materials (Deerfield Beach, Fla.)
ISSN: 1521-4095
Titre abrégé: Adv Mater
Pays: Germany
ID NLM: 9885358

Informations de publication

Date de publication:
Sep 2019
Historique:
received: 11 10 2018
revised: 01 07 2019
pubmed: 30 7 2019
medline: 30 7 2019
entrez: 30 7 2019
Statut: ppublish

Résumé

Phonon polaritons in van der Waals materials reveal significant confinement accompanied with long propagation length: important virtues for tasks pertaining to the control of light and energy flow at the nanoscale. While previous studies of phonon polaritons have relied on relatively thick samples, here reported is the first observation of surface phonon polaritons in single atomic layers and bilayers of hexagonal boron nitride (hBN). Using antenna-based near-field microscopy, propagating surface phonon polaritons in mono- and bilayer hBN microcrystals are imaged. Phonon polaritons in monolayer hBN are confined in a volume about one million times smaller than the free-space photons. Both the polariton dispersion and their wavelength-thickness scaling law are altered compared to those of hBN bulk counterparts. These changes are attributed to phonon hardening in monolayer-thick crystals. The data reported here have bearing on applications of polaritons in metasurfaces and ultrathin optical elements.

Identifiants

pubmed: 31353629
doi: 10.1002/adma.201806603
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

e1806603

Subventions

Organisme : DARPA Driven and Nonequilibrium Quantum Systems (DRINQS)
ID : D18AC00014
Organisme : U.S. Department of Energy
Organisme : Basic Energy Sciences
ID : DE-SC0019443
Organisme : AFOSR
ID : FA9550-15-1-0478
Organisme : AFOSR
ID : FA9550-16-1-0382
Organisme : Gordon and Betty Moore Foundation
ID : GBMF4533
Organisme : U.S. Department of Energy
ID : DESC0001088
Organisme : Gordon and Betty Moore Foundation's EPiQS Initiative
ID : GBMF4541
Organisme : STC Center for Integrated Quantum Materials
Organisme : National Science Foundation
ID : DMR-1231319
Organisme : Army Research Office
Organisme : MIT Institute for Soldier Nanotechnologies (ISN)
ID : 023674
Organisme : NSF
ID : DMR-1231319

Informations de copyright

© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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Auteurs

Siyuan Dai (S)

Materials Research and Education Center, Department of Mechanical Engineering, Auburn University, Auburn, AL, 36849, USA.

Wenjing Fang (W)

Department of Electrical Engineering & Computer Sciences, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.

Nicholas Rivera (N)

John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, 02139, USA.
Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.

Yijing Stehle (Y)

Sichuan University Pittsburgh Institute, Sichuan University, Sichuan, Chengdu, 610017, China.

Bor-Yuan Jiang (BY)

Department of Physics, University of California, San Diego, La Jolla, CA, 92093, USA.

Jialiang Shen (J)

Materials Research and Education Center, Department of Mechanical Engineering, Auburn University, Auburn, AL, 36849, USA.

Roland Yingjie Tay (RY)

School of Electrical and Electronic Engineering, Nanyang Technology University, 50 Nanyang Avenue, Singapore, 639798, Singapore.

Christopher J Ciccarino (CJ)

John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, 02139, USA.

Qiong Ma (Q)

Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.

Daniel Rodan-Legrain (D)

Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.

Pablo Jarillo-Herrero (P)

Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.

Edwin Hang Tong Teo (EHT)

School of Electrical and Electronic Engineering, Nanyang Technology University, 50 Nanyang Avenue, Singapore, 639798, Singapore.

Michael M Fogler (MM)

Department of Physics, University of California, San Diego, La Jolla, CA, 92093, USA.

Prineha Narang (P)

John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, 02139, USA.

Jing Kong (J)

Department of Electrical Engineering & Computer Sciences, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.

Dimitri N Basov (DN)

Department of Physics, Columbia University, New York, NY, 10027, USA.

Classifications MeSH