Design, Modeling, and Fabrication of High-Speed VCSEL with Data Rate up to 50 Gb/s.
50 Gb/s
Cavity length
High-speed VCSEL
Oxide aperture
PICS3D
Journal
Nanoscale research letters
ISSN: 1931-7573
Titre abrégé: Nanoscale Res Lett
Pays: United States
ID NLM: 101279750
Informations de publication
Date de publication:
14 Aug 2019
14 Aug 2019
Historique:
received:
21
05
2019
accepted:
28
07
2019
entrez:
16
8
2019
pubmed:
16
8
2019
medline:
16
8
2019
Statut:
epublish
Résumé
We have studied the characteristics of frequency response at 850-nm GaAs high-speed vertical-cavity surface-emitting lasers (VCSELs) with different kinds of oxide aperture sizes and cavity length using the PICS3D simulation program. Using 5-μm oxide aperture sizes, the frequency response behavior can be improved from 18.4 GHz and 15.5 GHz to 21.2 GHz and 19 GHz in a maximum of 3 dB at 25 °C and 85 °C, respectively. Numerical simulation results also suggest that the frequency response performances improved from 21.2 GHz and 19 GHz to 30.5 GHz and 24.5 GHz in a maximum of 3 dB at 25 °C and 85 °C due to the reduction of cavity length from 3λ/2 to λ/2. Consequently, the high-speed VCSEL devices were fabricated on a modified structure and exhibited 50-Gb/s data rate at 85 °C.
Identifiants
pubmed: 31414236
doi: 10.1186/s11671-019-3107-7
pii: 10.1186/s11671-019-3107-7
pmc: PMC6694349
doi:
Types de publication
Journal Article
Langues
eng
Pagination
276Subventions
Organisme : Ministry of Science and Technology of Taiwan
ID : MOST 106-2218-E-005-001-
Références
Small. 2018 Mar;14(13):e1703754
pubmed: 29383872
ACS Nano. 2019 Feb 26;13(2):1168-1176
pubmed: 30588789
Opt Express. 2019 Jun 10;27(12):A643-A653
pubmed: 31252844