Uniform-Sized Indium Quantum Dots Grown on the Surface of an InGaN Epitaxial Layer by a Two-Step Cooling Process.

In quantum dots In-rich layer Single InGaN layer

Journal

Nanoscale research letters
ISSN: 1931-7573
Titre abrégé: Nanoscale Res Lett
Pays: United States
ID NLM: 101279750

Informations de publication

Date de publication:
16 Aug 2019
Historique:
received: 05 06 2019
accepted: 21 07 2019
entrez: 18 8 2019
pubmed: 20 8 2019
medline: 20 8 2019
Statut: epublish

Résumé

A new method to grow Indium quantum dots (In QDs) on the surface of an epitaxial InGaN layer by MOCVD is proposed. Uniform-sized In quantum dots have been found to form on the surface of an InGaN layer when a two-step cooling process is taken. Through analyzing, we found that the formation of In QDs on the surface is due to the reaction between the surface In-rich layer and the carrier gas H

Identifiants

DOI: 10.1186/s11671-019-3095-7 PMID: 31420760 PMC: PMC6702591
pubmed: 31420760
doi: 10.1186/s11671-019-3095-7
pii: 10.1186/s11671-019-3095-7
pmc: PMC6702591
doi:

Types de publication

Journal Article

Langues

eng

Pagination

280

Références

Nanoscale Res Lett. 2014 Jul 04;9(1):334
pubmed: 25024692

Auteurs

Shuangtao Liu (S)

State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
ORCID: 0000-0002-9835-9470

Jing Yang (J)

State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China. yangjing333@semi.ac.cn.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China. yangjing333@semi.ac.cn.

Degang Zhao (D)

State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China. dgzhao@red.semi.ac.cn.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China. dgzhao@red.semi.ac.cn.

Desheng Jiang (D)

State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.

Jianjun Zhu (J)

State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.

Feng Liang (F)

State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.

Ping Chen (P)

State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.

Zongshun Liu (Z)

State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.

Yao Xing (Y)

State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.

Liyuan Peng (L)

State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.

Liqun Zhang (L)

Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, 215123, China.

Classifications MeSH