Electronic structure and optical properties of TaNO: An ab initio study.


Journal

Journal of molecular graphics & modelling
ISSN: 1873-4243
Titre abrégé: J Mol Graph Model
Pays: United States
ID NLM: 9716237

Informations de publication

Date de publication:
11 2019
Historique:
received: 18 05 2019
revised: 06 08 2019
accepted: 09 08 2019
pubmed: 21 8 2019
medline: 23 6 2020
entrez: 21 8 2019
Statut: ppublish

Résumé

We performed ab initio calculations to study the structural and optoelectronic properties of simple and slab phase TaNO using density functional theory (DFT), in which the full potential augmented plane wave (FP-LAPW) method was implemented using the computational code Wien 2k. The modified Becke-Johnson potential (mBJ-GGA) was used for these calculations. The calculated band structure and electronic properties revealed an indirect bandgap for simple TaNO (3.2 eV) and a direct bandgap for slab TaNO (1.5 eV). The interband electronic transitions were investigated from the band structure, and transition peaks were observed from the imaginary part of the dielectric function. These transitions are due to Ta-p, N-p and O-p orbitals for simple TaNO and Ta-p, N-s as well as O-p orbitals for slab TaNO. The plasmon energy was related to the main peak of the energy loss function, which was approximately 10 eV. The static value of the dielectric constant and the refraction were close to the experimental values. In general, slab TaNO shows different properties and is more suitable for optoelectronic applications due to direct bandgap.

Identifiants

pubmed: 31430680
pii: S1093-3263(19)30375-4
doi: 10.1016/j.jmgm.2019.08.006
pii:
doi:

Substances chimiques

Nitric Oxide 31C4KY9ESH
Tantalum 6424HBN274

Types de publication

Journal Article Research Support, Non-U.S. Gov't

Langues

eng

Sous-ensembles de citation

IM

Pagination

296-302

Informations de copyright

Copyright © 2019 Elsevier Inc. All rights reserved.

Auteurs

Muhammad Irfan (M)

Department of Physics, University of Sargodha, 40100, Sargodha, Pakistan.

Muhammad Arshad Kamran (MA)

Department of Physics, College of Science, Majmaah University, Al-Majmaah, 11952, Saudi Arabia. Electronic address: m.kamran@mu.edu.sa.

Sikander Azam (S)

Faculty of Engineering and Applied Sciences, Department of Physics, RIPHAH International University I-14 Campus Islamabad, Pakistan. Electronic address: sikander.physicst@gmail.com.

Muhammad Waqas Iqbal (MW)

Riphah International University, Lahore Campus 14 - Civic Center, Near Hamdard Chowk, Township, Lahore, Pakistan.

Thamer Alharbi (T)

Department of Physics, College of Science, Majmaah University, Al-Majmaah, 11952, Saudi Arabia.

Abdul Majid (A)

Department of Physics, College of Science, Majmaah University, Al-Majmaah, 11952, Saudi Arabia.

S Bin Omran (SB)

Department of Physics and Astronomy, College of Science, King Saud University, P.O.Box 2455, Riyadh, 11451, Saudi Arabia.

R Khenata (R)

Laboratoire de Physique Quantique de la Matière et de la Modélisation Mathématique (LPQ3M), Université de Mascara, Mascara, 29000, Algeria. Electronic address: khenata_rabah@yahoo.fr.

A Bouhemadou (A)

Laboratory for Developing New Materials and their Characterization, University of Setif 1, 19000, Setif, Algeria.

Xiaotian Wang (X)

School of Physical Science and Technology, Southwest University, Chongqing, 400715, China. Electronic address: xiaotianwang@swu.edu.cn.

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Classifications MeSH